Infrared pulsed laser deposition of niobium nitride thin films

IEEE Transactions on Applied Superconductivity

Volumn 21, Issue 3 PART 1, 2011, Pages 143-146

  Chaudhuri, S ^a   Nevala, M R ^a   Hakkarainen, T ^b   Niemi, T ^b   Maasilta, I J ^a  

^a UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^b TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

Pulsed laser deposition; Superconductivity ; Thin films; Tunnel junctions

Indexed keywords

1064 NM; ELECTRICAL CHARACTERISTIC; LATTICE PARAMETERS; MAGNESIUM OXIDES; ND : YAG LASERS; NIOBIUM NITRIDE; NITROGEN BASE; NORMAL METALS; PHOTON ENERGY; PULSED-LASER DEPOSITION TECHNIQUE; QUASI PARTICLES;

DEPOSITION; INFRARED LASERS; MAGNESIUM; NEODYMIUM LASERS; NIOBIUM; NIOBIUM OXIDE; NITRIDES; OXIDE FILMS; PULSED LASER DEPOSITION; SINGLE CRYSTALS; SUPERCONDUCTING FILMS; SUPERCONDUCTING TRANSITION TEMPERATURE; SUPERCONDUCTIVITY; THIN FILMS; TUNNEL JUNCTIONS; VAPOR DEPOSITION;

PULSED LASERS;

EID: 79957942819     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/TASC.2010.2081656     Document Type: Conference Paper

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