Fabrication characterization of epitaxial nbn/tan/nbn josephson junctions grown by pulsed laser ablation

IEEE Transactions on Applied Superconductivity

Volumn 19, Issue 3, 2009, Pages 253-256

  Nevala, Minna R ^a   Maasilta, Ilari J ^c   Senapati, Kartik ^a   Budhani, Ramesh C ^b  

^a UNIVERSITY OF JYVÄSKYLÄ   (Finland)

^b INDIAN INSTITUTE OF TECHNOLOGY KANPUR   (India)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Josephson junctions; Pulsed laser deposition; Superconducting device fabrication; Superconductor normal superconductor devices

Indexed keywords

E BEAM EVAPORATION; E-BEAM LITHOGRAPHY; HIGH-SPEED DIGITAL ELECTRONICS; JOSEPHSON JUNCTIONS; MGO SUBSTRATE; NOVEL PROCESS; PULSED LASER ABLATION; SINGLE FLUX QUANTUM; SNS JUNCTIONS; SUPERCONDUCTING DEVICE FABRICATION; SUPERCONDUCTOR-NORMAL-SUPERCONDUCTOR DEVICES; TEMPERATURE DEPENDENCE; THEORETICAL VALUES; TRILAYER FILM;

DIGITAL DEVICES; ELECTRON DEVICES; FABRICATION; JOSEPHSON JUNCTION DEVICES; LASER ABLATION; LASER APPLICATIONS; LASERS; LITHOGRAPHY; PASSIVE NETWORKS; SINGLE CRYSTALS; SUPERCONDUCTING MATERIALS; SUPERCONDUCTIVITY; VAPORS;

PULSED LASER DEPOSITION;

EID: 68649087332     PISSN: 10518223     EISSN: None     Source Type: Journal    
DOI: 10.1109/TASC.2009.2019030     Document Type: Conference Paper

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