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Volumn 91, Issue 19-21, 2011, Pages 2870-2878

Influence of the substrate temperature and deposition flux in the growth of a Bi thin film on the ten-fold decagonal Al-Ni-Co surface

(4) Sharma, H R a Ledieu, J b Fournee, V b Gille, P c

a UNIVERSITY OF LIVERPOOL (United Kingdom)

b INSTITUT JEAN LAMOUR (France)

c UNIVERSITY OF MUNICH (Germany)

Author keywords

Al Ni Co; Bi; low energy electron diffraction; quasicrystal; scanning tunneling microscopy; thin film

Indexed keywords

AL-NI-CO; ATOMIC LAYER; BI; BI THIN FILMS; DEPOSITION FLUXES; DIFFERENT SUBSTRATES; FILM MORPHOLOGY; HIGH FLUX; HIGH SYMMETRY; LOW ENERGY ELECTRONS; LOW FLUX; LOW TEMPERATURES; PSEUDOCUBIC; QUASICRYSTALLINE; ROOM TEMPERATURE; SCANNING TUNNELING MICROSCOPY (STM); SUBSTRATE TEMPERATURE; SURFACE ORIENTATION; TWO LAYERS;

ALUMINUM; BALLOONS; BISMUTH; COBALT; DEPOSITION; DIFFRACTION; LOW ENERGY ELECTRON DIFFRACTION; MONOLAYERS; QUASICRYSTALS; SCANNING TUNNELING MICROSCOPY; THIN FILMS; VAPOR DEPOSITION;

FILM GROWTH;

EID: 79957850708 PISSN: 14786435 EISSN: 14786443 Source Type: Journal
DOI: 10.1080/14786435.2010.507180 Document Type: Article

Times cited : (5)

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