Chemical mechanical polishing of Cu pattern wafer based alkaline slurry in GLSI with R(NH2)n as complexing agent

Advanced Materials Research

Volumn 236-238, Issue , 2011, Pages 3020-3023

  He, Yan Gang ^a   Gan, Xiao Wei ^a   Hong, Wei ^b   Hu, Yi ^a   Liu, Yu Ling ^a  

^a HEBEI UNIVERSITY OF TECHNOLOGY   (China)

^b SEMICONDUCTOR MANUFACTURING INTERNATIONAL CORPORATION   (China)

Author keywords

Alkaline slurry; Chemical mechanical planarization; Cu pattern wafer; GLSI

Indexed keywords

ALKALINE SLURRY; CHEMICAL MECHANICAL PLANARIZATIONS; COMPLEXING AGENTS; CU PATTERN WAFER; EROSION CONDITIONS; GLSI; PLANARITY; REACTION MECHANISM ANALYSIS; SLURRY STABILITY;

ALKALINITY; CHEMICAL ENGINEERING; EROSION; POLISHING; SLURRIES;

CHEMICAL MECHANICAL POLISHING;

EID: 79957796843     PISSN: 10226680     EISSN: None     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/AMR.236-238.3020     Document Type: Conference Paper

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