GaSb-based semiconductor disk laser with 130-nm tuning range at 2.5 μ m

IEEE Photonics Technology Letters

Volumn 23, Issue 12, 2011, Pages 777-779

  Nikkinen, J ^a   Paajaste, J ^a   Koskinen, R ^a   Suomalainen, S ^a   Okhotnikov, O G ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

Optical pumping; quantum well (QW) lasers; semiconductor lasers; surface emitting lasers

Indexed keywords

DISK LASERS; FUNDAMENTAL MODES; GAIN STRUCTURES; HEAT SPREADERS; INTRACAVITIES; OUTPUT POWER; POWER-SCALING; QUANTUM WELL; SEMICONDUCTOR DISK LASER; SPECTRAL COVERAGE; TUNING RANGES; WAVELENGTH TUNING;

GALLIUM ALLOYS; LASERS; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPTICAL PUMPING;

SEMICONDUCTOR LASERS;

EID: 79957665979     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2011.2122249     Document Type: Article

References (8)

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