Conductance and phase transition of freestanding ZnO nanocrystals under high pressure

Materials Science and Technology

Volumn 19, Issue 7, 2003, Pages 981-984

  Wu, Z Y ^a,b   Bao, Z X ^c   Zou, X P ^c   Tang, D S ^c   Liu, C X ^c   Dai, J H ^c   Xie, S S ^c   Li, Q S ^a   Shen, Z X ^c   Zou, B S ^c  

^a BEIJING INSTITUTE OF TECHNOLOGY   (China)

^b INSTITUTE OF PHYSICS   (China)

^c NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC CONDUCTANCE; ELECTRIC RESISTANCE; MICROEMULSIONS; PHASE TRANSITIONS; ZINC OXIDE;

TRANSITION POINT PRESSURE;

NANOSTRUCTURED MATERIALS;

METAL OXIDE; ZINC OXIDE;

ARTICLE; CONDUCTANCE; CRYSTAL; ELECTRIC RESISTANCE; NANOPARTICLE; POWDER; PRESSURE;

EID: 0041814459     PISSN: 02670836     EISSN: None     Source Type: Journal    
DOI: 10.1179/026708303225003081     Document Type: Article

References (25)

1. R. F. SERVICE: Science, 1997, 276, 895.
2. C. H. BATES, W. B. WHITE and R. ROY: Science, 1962, 137, 993.
3. B. S. ZOU, B. WANG, G. Q. TANG, G. L. ZHANG and W. J. CHEN: Chin. Sci. Bull., 1993, 38, 1183.
4. B. S. ZOU, Z. L. WANG and V. VOLKOV: Chem. Mater., 1999, 11, 3037.
5. H. KARZEL, W. POTZEL, M. KÖFERLEIN, W. SCHIESSL, U. HILLER, G. M. KALVIUS, D. W. MITCHELL, T. P. DAS, P. BLAHA, K. SCHWARZ and M. P. PASTERNAK: Phys. Rev. B, 1996, B53, 11425.
6. S. DESGRENIERS: Phys. Rev. B, 1998, B58, 14102.
7. F. DECREMPS, J. ZHANG, B. LI and R. C. LIEBERMANN: Phys. Rev. B, 2001, B63, 224105.
8. J. E. JAFFE, J. A. SNYDER, Z. LIN and A. C. HESS: Phys. Rev. B, 2000, B62, 1660.
9. J. E. JAFFE and A. C. HESS: Phys. Rev. B, 1993, B48, 7903.
10. R. AHUJA, L. FAST, O. ERIKSSON, J. M. WILLS and B. JOHANSSON: J. Appl. Phys., 1998, 83, 8065.
11. J. M. RECIO, M. A. BLANCO, V. LUAÑA, R. PANDEY, L. GERWARD and J. S. OLSEN: Phys. Rev. B, 1998, B58, 8949.
12. J. M. RECIO, R. PANDEY and V. LUARA: Phys. Rev. B, 1993, B47, 3401.
13. Q. CUI, H. YANG, B. LIU and G. ZOU: Mater. Lett., 1999, 41, 97.
14. J. Z. JIANG, J. S. OLSEN, D. FROST, R. SECCO and J. PEYRONNEAU: Mater. Sci. Forum, 2000, 343, 15-20.
15. S. H. TOLBERT and A. P. ALIVISATOS: Science, 1994, 265, 373.
16. S. H. TOLBERT, A. B. HERHOLD and L. E. BRUS et al.: Phys. Rev. Lett., 1996, 76, 4384.
17. S. H. TOLBERT and A. P. ALIVISATOS: J. Chem. Phys., 1995, 102, 4642.
18. Z. X. BAO, V. H. SCHMIDT and F. L. HOWELL: J. Appl. Phys., 1991, 70, 6808.
19. W. CLASS, A. LANUCCI and H. NESOR: Noreco Rep., 1996, 13, 87.
20. D. S. TANG, Z. X. BAO and L. J. CHEN et al.: J. Phys. Chem. Solids, 2000, 61, 1175.
21. Z. X. BAO, V. H. SCHMIDT and N. S. DALAL et al.: Chin. Phys., 2000, 9, 676.
22. Z. X. BAO, J. R. ANDESON and V. H. SCHMIDT: High Temp. - High Press., 1995/1996, 27/28, 383.
23. J. N. WICKHAM, A. B. HERHOLD and A. P. ALIVISATOS: Phys. Rev. Lett., 2000, 84, 923.
24. A. L. EDWARDS, T. E. SLYKHOUSE and H. G. DRICKAMER: J. Phys. Chem. Solids, 1959, 11, 140.
25. J. E. JAFFE, R. PANDEY and A. B. KUNX: Phys. Rev. B, 1991, B43, 14030.