Novel In2O3 nanostructures fabricated by controlling the kinetics factor for field emission display

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 43, Issue 8, 2011, Pages 1502-1508

  Huang, Yanjun ^a   Yu, Ke ^a   Xu, Zhe ^a   Zhu, Ziqiang ^a  

^a EAST CHINA NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC VOLTAGE; FIELD EMISSION CURRENTS; FIELD EMISSION MEASUREMENTS; FIELD EMISSION PROPERTY; GROWTH MECHANISMS; INDIUM OXIDE; LAYERED STRUCTURES; NANOTOWERS; SATURATION RATIO; SHARP TIP; SILICON SUBSTRATES; THRESHOLD FIELDS; TURN-ON FIELD; VAPOR-PHASE TRANSPORT METHOD;

ATMOSPHERIC MOVEMENTS; ATMOSPHERIC PRESSURE; FIELD EMISSION; GROWTH KINETICS; INDIUM; NANORODS; SYNTHESIS (CHEMICAL);

FIELD EMISSION DISPLAYS;

EID: 79957617334     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physe.2011.04.017     Document Type: Article

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