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Volumn 50, Issue 5 PART 3, 2011, Pages

Temperature-induced valence transition of EuPd2Si2 studied by hard x-ray photoelectron spectroscopy

(15) Mimura, Kojiro a Uozumi, Takayuki a Ishizu, Takahiko a Motonami, Satoru a Sato, Hitoshi b Utsumi, Yuki c Ueda, Shigenori d Mitsuda, Akihiro e Shimada, Kenya b Taguchi, Yukihiro a Yamashita, Yoshiyuki d Yoshikawa, Hideki d Namatame, Hirofumi b Taniguchi, Masaki b,c Kobayashi, Keisuke d

a Osaka Prefecture University (Japan)

b HIROSHIMA UNIVERSITY (Japan)

c HIROSHIMA UNIVERSITY (Japan)

d NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

e KYUSHU UNIVERSITY (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANDERSON MODELS; CORE LEVELS; HARD X-RAY PHOTOELECTRON SPECTROSCOPY; PEAK SHIFT; SPECTRAL SHAPES; TEMPERATURE DEPENDENT; TEMPERATURE-INDUCED VALENCE TRANSITION; VALENCE ELECTRON; VALENCE TRANSITIONS;

ELECTRONIC STRUCTURE; EUROPIUM; PHOTOELECTRICITY; PHOTONS; SILICON; X RAY PHOTOELECTRON SPECTROSCOPY;

PHOTOELECTRON SPECTROSCOPY;

EID: 79957610051 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.50.05FD03 Document Type: Article

Times cited : (17)

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