Hard X-ray photoemission spectroscopy of temperature-induced valence transition in EuNi2(Si0.20Ge0.80)2

Journal of the Physical Society of Japan

Volumn 73, Issue 10, 2004, Pages 2616-2619

  Yamamoto, Kazuya ^a,b   Taguchi, Munetaka ^b   Kamakura, Nozomu ^b   Horiba, Koji ^b   Takata, Yasutaka ^b   Chainani, Ashish ^b   Shin, Shik ^b,c   Ikenaga, Eiji ^d   Mimura, Kojiro ^a   Shiga, Masayuki ^e   Wada, Hirofumi ^e   Namatame, Hirofumi ^f   Taniguchi, Masaki ^f   Awaji, Mitsuhiro ^d   Takeuchi, Akihisa ^d   Nishino, Yoshinori ^b   Miwa, Daigo ^b   Ishikawa, Tetsuya ^b   Kobayashi, Keisuke ^d  

^a Osaka Prefecture University   (Japan)

^b RIKEN/SPring 8 ^*  (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

^d JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

^e KYOTO UNIVERSITY   (Japan)

^f HIROSHIMA UNIVERSITY   (Japan)

Author keywords

EuNi2(Si1 xGex)2; Hard X ray photoemission; Rare earth compounds; Temperature induced valence transition

Indexed keywords

EUROPIUM; LANTHANIDE; NICKEL;

ARTICLE; MAGNETIC FIELD; MEASUREMENT; PHASE TRANSITION; RADIATION ABSORPTION; RADIATION SCATTERING; TEMPERATURE DEPENDENCE; X RAY DIFFRACTION; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 20244387469     PISSN: 00319015     EISSN: None     Source Type: Journal    
DOI: 10.1143/JPSJ.73.2616     Document Type: Article

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