Temperature dependence of Eu 4f states in EuPd2Si2: Bulk-sensitive high-resolution photoemission study

Physica B: Condensed Matter

Volumn 351, Issue 3-4, 2004, Pages 292-294

  Mimura, Kojiro ^a   Taguchi, Yukihiro ^a   Fukuda, Shuichi ^b   Mitsuda, Akihiro ^b   Sakurai, Junji ^b   Ichikawa, Kouichi ^a   Aita, Osamu ^a  

^a Osaka Prefecture University   (Japan)

^b UNIVERSITY OF TOYAMA   (Japan)

Author keywords

Eu 4f state; EuPd2Si2; Photoemission spectroscopy; Temperature induced valence transition

Indexed keywords

ABSORPTION; ANNEALING; BINDING ENERGY; ELECTRONIC STRUCTURE; EUROPIUM COMPOUNDS; FERMI LEVEL; PHOTOELECTRON SPECTROSCOPY; THERMAL EFFECTS; X RAY ANALYSIS;

ELECTRON CONDUCTION; PHOTOEMISSION SPECTROSCOPY; TEMPERATURE DEPENDENCE; VALENCE TRANSITION;

PHOTOEMISSION;

EID: 4644247441     PISSN: 09214526     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.physb.2004.06.030     Document Type: Conference Paper

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