Radiative decay of surface-trapped carriers and quantum yield in CdSe nanocrystal quantum dots

Current Applied Physics

Volumn 11, Issue 4, 2011, Pages 1056-1059

  Kim, Sang Min ^a   Yang, Ho Soon ^a  

^a Pusan National University   (South Korea)

Author keywords

CdSe; Quantum dots; Semiconductor nanocrystals; Surface energy levels

Indexed keywords

CDSE; CDSE NANOCRYSTALS; DIFFERENT SOLVENTS; EMISSION DYNAMICS; HEXADECYLAMINE; NANOCRYSTAL QUANTUM DOTS; OCTADECENE; OPTICAL EFFICIENCY; OPTICAL EMISSIONS; QUANTUM DOTS; RADIATIVE DECAY; RADIATIVE RELAXATION; RELATIVE INTENSITY; SEMICONDUCTOR NANOCRYSTALS; SURFACE CONDITIONS; SURFACE ENERGY LEVELS; SURFACE ENERGY TRAP; SURFACE PASSIVATION; TIME-RESOLVED PHOTOLUMINESCENCE SPECTRUM; WURTZITE STRUCTURE;

CADMIUM ALLOYS; CADMIUM COMPOUNDS; DIRECTIVE ANTENNAS; ENERGY EFFICIENCY; INTERFACIAL ENERGY; NANOCRYSTALS; ORDINARY DIFFERENTIAL EQUATIONS; PASSIVATION; PHOTOLUMINESCENCE; QUANTUM YIELD; SEMICONDUCTOR QUANTUM DOTS; SURFACE CHEMISTRY; ZINC SULFIDE;

SURFACE STRUCTURE;

EID: 79957571970     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2011.01.044     Document Type: Article

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