Carbon nanotube semitransparent electrodes for amorphous silicon based photovoltaic devices

Applied Physics Letters

Volumn 98, Issue 18, 2011, Pages

  Del Gobbo, S ^a   Castrucci, P ^a   Scarselli, M ^a   Camilli, L ^a   De Crescenzi, M ^a   Mariucci, L ^b   Valletta, A ^b   Minotti, A ^b   Fortunato, G ^b  

^a UNIVERSITY OF ROME TOR VERGATA   (Italy)

^b CNR   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CONTACT QUALITY; EXTERNAL QUANTUM EFFICIENCY; LOW COSTS; NUMERICAL SIMULATION; OPTICAL TRANSPARENCY; PHOTOVOLTAIC DEVICES; SCHOTTKY BARRIERS; SEMI-TRANSPARENT ELECTRODES; SILICON SUBSTRATES; SINGLE-WALL CARBON NANOTUBES; SOLAR CELL EFFICIENCIES; SPECTRAL BEHAVIORS; ULTRA-THIN;

AMORPHOUS CARBON; COLLECTOR EFFICIENCY; EFFICIENCY; PHOTOVOLTAIC EFFECTS; SCHOTTKY BARRIER DIODES; SEMICONDUCTING SILICON COMPOUNDS; SINGLE-WALLED CARBON NANOTUBES (SWCN); SOLAR CELLS; SOLAR POWER GENERATION;

AMORPHOUS SILICON;

EID: 79957529490     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3588352     Document Type: Article

References (17)

1. J. U. Lee, Appl. Phys. Lett. 0003-6951 87, 073101 (2005). 10.1063/1.2010598 (Pubitemid 41230666)
2. J. Wei, Y. Jia, Q. Shu, Z. Gu, K. Wang, D. Zhuang, G. Zhang, Z. Wang, J. Luo, A. Cao, and D. Wu, Nano Lett. 1530-6984 7, 2317 (2007). 10.1021/nl070961c (Pubitemid 47310126)
3. Y. Jia, J. Wei, K. Wang, A. Cao, Q. Shu, X. Gui, Y. Zhu, D. Zhuang, G. Zhang, B. Ma, L. Wang, W. Z. Wang, J. Luo, and D. Wu, Adv. Mater. (Weinheim, Ger.) 0935-9648 20, 4594 (2008). 10.1002/adma.200801810
4. Z. Li, V. P. Kunets, V. Saini, Y. Xu, E. Dervishi, G. J. Salamo, A. R. Biris, and A. S. Biris, ACS Nano 1936-0851 3, 1407 (2009). 10.1021/nn900197h
5. P. Wadhwa, B. Liu, M. A. McCarthy, Z. Wu, and A. G. Rinzler, Nano Lett. 1530-6984 10, 5001 (2010).
6. M. A. El Khakani, V. Le Borgne, B. Assa, F. Rosei, C. Scilletta, E. Speiser, M. Scarselli, P. Castrucci, and M. De Crescenzi, Appl. Phys. Lett. 0003-6951 95, 083114 (2009). 10.1063/1.3211958
7. V. Le Borgne, P. Castrucci, S. Del Gobbo, M. Scarselli, M. De Crescenzi, M. Mohamedi, and M. A. El Khakani, Appl. Phys. Lett. 0003-6951 97, 193105 (2010). 10.1063/1.3513266
8. P. Castrucci, F. Tombolini, M. Scarselli, E. Speiser, S. Del Gobbo, W. Richter, M. De Crescenzi, M. Diociaiuti, E. Gatto, and M. Venanzi, Appl. Phys. Lett. 0003-6951 89, 253107 (2006). 10.1063/1.2408648 (Pubitemid 46035182)
9. P. Castrucci, M. Scarselli, M. De Crescenzi, M. A. El Khakani, F. Rosei, N. Braidy, and J. -H. Yi, Appl. Phys. Lett. 0003-6951 85, 3857 (2004). 10.1063/1.1809277
10. D. A. Stewart and F. Ĺonard, Phys. Rev. Lett. 0031-9007 93, 107401 (2004). 10.1103/PhysRevLett.93.107401
11. M. S. Fuhrer, J. Nygrd, L. Shih, M. Forero, Y. -G. Yoon, M. S. C. Mazzoni, H. J. Choi, J. Ihm, M. Steven, G. Louie, A. Zettl, and P. L. McEuen, Science 0036-8075 288, 494 (2000). 10.1126/science.288.5465.494 (Pubitemid 30236027)
12. S. Lu and B. Panchapakesan, Nanotechnology 0957-4484 17, 1843 (2006). 10.1088/0957-4484/17/8/006
13. D. H. Lien, W. K. Hsu, H. W. Zan, N. H. Tai, and C. H. Tsai, Adv. Mater. (Weinheim, Ger.) 0935-9648 18, 98 (2006). 10.1002/adma.200500912 (Pubitemid 43076270)
14. C. A. Merchant and N. Markovic, Appl. Phys. Lett. 0003-6951 92, 243510 (2008). 10.1063/1.2949742
15. EQE is the ratio between the number of electrons generated by the device and the number of photons impinging it. For every wavelength (λ), the photocurrent density generated by the sample I (λ) and the lamp power density P (λ) are measured and used as follows: EQE (%) =100 [hcI (λ)] [λP (λ) q] -1 where c is the speed of light, h is the Planck constant, and q is the electronic charge.
16. M. Hack and M. Shur, J. Appl. Phys. 0021-8979 58, 997 (1985). 10.1063/1.336148
17. M. Glatthaar, M. Riede, N. Keegan, K. Sylvester-Hvid, B. Zimmermann, M. Niggemann, A. Hinsch, and A. Gombert, Sol. Energy Mater. Sol. Cells 0927-0248 91, 390 (2007). 10.1016/j.solmat.2006.10.020 (Pubitemid 46149273)