Mg doping effect on nanoscale crystallization and band gap of sol-gel derived MgxZn1-xO (x = 0-1) alloys

Nanoscience and Nanotechnology Letters

Volumn 3, Issue 3, 2011, Pages 417-422

  Li, Keyan ^a   Wu, Junshu ^a   Xue, Dongfeng ^a  

^a DALIAN UNIVERSITY OF TECHNOLOGY   (China)

Author keywords

Band Gap; Crystallization; MgxZn1 xO Alloys; Sol Gel

Indexed keywords

ALLOYED POWDER; ANNEALING TEMPERATURES; BAND GAPS; CRYSTALLINITIES; HOLLOW SHELLS; MG CONCENTRATIONS; MG CONTENT; MG-DOPING; MGXZN1-XO ALLOYS; MORPHOLOGICAL VARIATION; NANO SCALE; NANOSIZED PORES; PACKING DENSITY; POTENTIAL APPLICATIONS; PURE ZNO; SEM; SOL-GEL TECHNIQUE; SPHERICAL PARTICLE; TEMPERATURE DEPENDENT; THERMAL STABILITY; UV-VISIBLE; ZNO MATRIX;

ALLOYS; CERIUM ALLOYS; CRYSTALLIZATION; ENERGY GAP; GELS; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; SCANNING ELECTRON MICROSCOPY; SOL-GEL PROCESS; SOL-GELS; SOLS; ZINC; ZINC OXIDE;

ZINC ALLOYS;

EID: 79957455862     PISSN: 19414900     EISSN: 19414919     Source Type: Journal    
DOI: 10.1166/nnl.2011.1169     Document Type: Article

References (29)

1. S. A. Morin, M. J. Bierman, J. Tong, and S. Jin, Science 328, 476 (2010).
2. C. Yan, J. Liu, F. Liu, J. Wu, K. Gao, and D. Xue, Nanoscale Res. Lett. 3, 473 (2008).
3. C. R. Hall, L. Dao, K. Koike, S. Sasa, H. H. Tan, M. Inoue, M. Yano, P. Hannaford, C. Jagadish, and J. A. Davis, Phys. Rev. B 80, 235316 (2009).
4. J. Wu and D. Xue, Mater. Res. Bull. 45, 300 (2010).
5. A. Malashevich and D. Vanderbilt, Phys. Rev. B 75, 045106 (2007).
6. P. Lu and D. Xue, Surf. Rev. Lett. 17, 261 (2010).
7. J. Wu and D. Xue, Mater. Res. Bull. 45, 295 (2010).
8. J. Wu and D. Xue, Sci. Adv. Mater. 3, 1 (2011).
9. I. V. Maznichenko, A. Ernst, M. Bouhassoune, J. Henk, M. Dane, M. Luders, P. Bruno, W. Hergert, I. Mertig, Z. Szotek, and W. M. Temmerman, Phys. Rev. B 80, 144101 (2009).
10. K. Li, X. Wang, F. Zhang, and D. Xue. Phys. Rev. Lett. 100, 235504 (2008).
11. F. Liu and D. Xue, Phys. Scripta T139, 014074 (2010).
12. J. Liu and D. Xue, Nanoscale Res. Lett. 5, 1525 (2010).
13. F. Liu and D. Xue, Mod. Phys. Lett. B 23, 3769 (2009).
14. C. S. Suchand Sandeep, R. Philip, R. Satheeshkumar, and V. Kumar, Appl. Phys. Lett. 89, 063102 (2006).
15. J. Liu and D. Xue, Nanoscale Res. Lett. 5, 1619 (2010).
16. P. Lu and D. Xue, Mod. Phys. Lett. B 23, 3843 (2009).
17. T. Makino, K. Tamura, C. H. Chia, Y. Segawa, M. Kawasaki, A. Ohtomo, and H. Koinuma, Appl. Phys. Lett. 81, 2355 (2002).
18. J. Wu and D. Xue, Nanoscale Res. Lett. 6, 14 (2011).
19. K. Li and D. Xue, Phys. Scripta, T139, 014072 (2010).
20. K. Li and D. Xue, Mater. Res. Bull. 45, 288 (2010).
21. K. Li, Z. Ding, and D. Xue, Funct. Mater. Lett. 3, 241 (2010).
22. J. F. Sarver, F. L. Katnack, and F. A. Hummel, J. Electrochem. Soc. 106, 960 (1959).
23. W. I. Park, G. C. Yi, and H. M. Jang, Appl. Phys. Lett. 79, 2022 (2001).
24. C. W. Teng, J. F. Muth, U. Ozgur, M. J. Bergmann, H. O. Everitt, A. K. Sharma, C. Jin, and J. Narayan, Appl. Phys. Lett. 76, 979 (2000).
25. G. Lu, I. Lieberwirth, and G. Wegner, J. Am. Chem. Soc. 128, 15445 (2006).
26. S. Choopun, R. D. Vispute, W. Yang, R. P. Sharma, T. Venkatesan, and H. Shen, Appl. Phys. Lett. 80, 1529 (2002).
27. M. Ghosh and A. K. Raychaudhuri, J. Appl. Phys. 100, 034315 (2006).
28. R. Kling, C. Kirchner, Th. Gruber, F. Reuss, and A. Waag, Nanotechnology 15, 1043 (2004).
29. T. Ghoshal, S. Kar, and S. Chaudhuri, Cryst. Growth Des. 7, 136 (2007).