Interaction of gas-phase atomic hydrogen with chemisorbed oxygen atoms on a silicon surface

Bulletin of the Korean Chemical Society

Volumn 32, Issue 5, 2011, Pages 1527-1533

  Lee, Sang Kwon ^a   Ree, Jongbaik ^a   Kim, Yoo Hang ^b   Shin, Hyung Kyu ^c  

^a Chonnam National University   (South Korea)

^b Inha University   (South Korea)

^c UNIVERSITY OF NEVADA   (United States)

Author keywords

Classical trajectory; Hydrogen; OH; Oxygen; Silicon

Indexed keywords

ATOMIC HYDROGEN; AVAILABLE ENERGY; CHEMISORBED OXYGEN; CLASSICAL TRAJECTORIES; ENERGY DEPOSITS; FLOW OF ENERGY; GAS TEMPERATURE; GASPHASE; IMPACT COLLISION; INITIAL EXCITATION; OH; OH FORMATION; OXYGEN ATOM; REACTION ENERGY; REACTION EXOTHERMICITY; REACTION PROBABILITY; REACTION ZONES; ROTATIONAL MOTION; SILICON SURFACES; SUBPICOSECOND; SURFACE TEMPERATURES; TRAJECTORY CALCULATIONS; VIBRATIONAL ENERGIES; VIBRATIONAL MOTIONS;

ATOMS; CHEMISORPTION; DESORPTION; HYDROGEN; OXYGEN; PROBABILITY; REACTION KINETICS; SILICON; TRAJECTORIES;

SURFACE REACTIONS;

EID: 79957452010     PISSN: 02532964     EISSN: 12295949     Source Type: Journal    
DOI: 10.5012/bkcs.2011.32.5.1527     Document Type: Article

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