Ablation of SiN passivation layers on photovoltaic cells with femtosecond laser source

Journal of Laser Micro Nanoengineering

Volumn 5, Issue 2, 2010, Pages 125-127

  Stolberg, K ^a   Friedel, S ^a   Kremser, B ^a   Leitner, M ^a   Atsuta, Y ^b  

^a JENOPTIK Laser Optik Systeme GmbH   (Germany)

^b Optopia CoLtd   (Japan)

Author keywords

Antireflection layer; Femtosecond laser; LAMP2009; Laser scribing; Monocrystalline silicon; Multicrystalline silicon; Passivation layer; Selective emitter; Solar cell

Indexed keywords

ANTIREFLECTION LAYERS; FEMTO-SECOND LASER; LAMP2009; LASER SCRIBING; MULTI-CRYSTALLINE SILICON; PASSIVATION LAYER; SELECTIVE EMITTERS;

ABLATION; ANTIREFLECTION COATINGS; INFRARED DEVICES; MONOCRYSTALLINE SILICON; PASSIVATION; PHOTOVOLTAIC CELLS; POLYSILICON; SEMICONDUCTING SILICON COMPOUNDS; SILICON NITRIDE; SILICON WAFERS; SOLAR CELLS; SOLAR POWER GENERATION; ULTRAFAST LASERS;

ULTRASHORT PULSES;

EID: 79956371641     PISSN: None     EISSN: 18800688     Source Type: Journal    
DOI: 10.2961/jlmn.2010.02.0005     Document Type: Article

References (5)

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3. nd EPSEC, September 3-7, 2007, Milano
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5. K.Stolberg et al., Systematic optimisation of process parameters in laser drilling..., JLMN- Journal of Laser Micro/Nanoengineering, Vol.4, Nr.3, 2009, pp. 231-233