The effects of Mn concentration on structural and magnetic properties of Ge1-xMnx diluted magnetic semiconductors

Journal of Physics: Conference Series

Volumn 292, Issue 1, 2011, Pages

  Le, T G ^a,c   Nam, D N H ^b   Dau, M T ^a   Luong, T K P ^c   Khiem, N V ^c   Le Thanh, V ^a   Michez, L ^a   Derrien, J ^a  

^a AIX MARSEILLE UNIVERSITÉ   (France)

^b University of Virginia   (United States)

^c HONG DUC UNIVERSITY   (Viet Nam)

Author keywords

[No Author keywords available]

Indexed keywords

DILUTED MAGNETIC SEMICONDUCTORS; GERMANIUM; GROWTH KINETICS; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; MAGNETIC SEMICONDUCTORS; MAGNETISM; MANGANESE COMPOUNDS; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR GROWTH; TRANSMISSION ELECTRON MICROSCOPY;

COMPETING PROCESS; HETEROGENEOUS PHASIS; HIGH CURIE TEMPERATURE; MN CONCENTRATIONS; NANO-COLUMNS; PROCESS WINDOW; PROPERTY MEASUREMENT; STRUCTURAL AND MAGNETIC PROPERTIES;

MANGANESE;

EID: 79956146675     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/292/1/012012     Document Type: Conference Paper

References (24)

1. Ohno H 1998 Science 281 951
2. Dietl T Semicond. Sci. Technol. 17 377
3. Stroppa A, Picozzi S, Continenza A and Freeman A J 2003 Phys. Rev. B 68 155203
4. Pinto N, Morresi L, Ficcadenti M, Murri R, D'Orazio F, Lucari F, Boarino L and Amato G 2005 Phys. Rev. B 72 165203
5. Tsui F, He L, Ma L, Tkachuk A, Chu Y S, Nakajima K and Chikyow T 2003 Phys. Rev. Lett. 91 177203
6. Braak H et al. 2005 J. Magn. Magn. Mater. 286 46
7. Morresi L, Ayoub J, Pinto N, Ficcadenti M, Murri R, Ronda A and Berbezier I 2006 Mater. Sci. Semicond. Process. 9 836
8. Li A P, Wendelken J F, Shen J, Feldman L C, Thompson J R, Weitering H H 2005 Phys. Rev. B 72 195205
9. Cho S, Choi S, Hong S C, Kim Y, Ketterson J B, Kim B J, Kim YC and J.-H. Jung, Phys. Rev. B 66 (2002) 033303
10. Park Y D, Hanbicki A T, Erwin S C, Hellberg C S, Sullivan J M, Mattson J E, Ambrose T F, Wilson A, Spanos G and Jonker B T 2002 Science 295 651
11. Park Y D, Wilson A, Hanbicki A T, Matteson J E, Ambrose T, Spanos G and Jonker B T 2001 Appl. Phys. Lett. 78 2739
12. Li A P, Shun J, Thompson J R and Weitering H H 2005 Appl. Phys. Lett. 86 152507
13. Ottaviano L, Passacantando M, Picozzi S, Continenza A, Gunnella R, Verna A, Impellizzeri G and Priolo F 2006 Appl. Phys. Lett. 88 061907
14. Passacantando M, Ottaviano L, D'Orazio F, Lucari F, De Biase M, Impellizzeri G and Priolo F 2006 Phys. Rev. B 73 195207
15. Verna A et al. 2006 Phys. Rev. B 74 085204
16. Chen J, Wang K L and Galatsis K 2007 Appl. Phys. Lett. 90 012510
17. Bihler C, Jaeger C, Vallaitis T, Gjukic M, Brandt M S, Pippel E, Woltersdorf J and Gosele U 2006 Appl. Phys. Lett. 88 112506
18. Ahlers S, Bougeard D, Sircar N, Abstreiter G, Trampert A, Opel M and R Gross 2006 Phys. Rev. B 74 214411
19. Bougeard D, Ahlers S, Trampert A, Sircar N and Abstreiter G 2006 Phys. Rev. Lett. 97 237202
20. Bougeard D, Sircar N, Ahlers S, Lang V, Abstreiter G, Trampert A, LeBeau J M, Stemmer S, Saxey D W and Cerezo A 2009 NanoLetters 9 3743
21. Jamet M et al. 2006 Nat. Mater.5 653.
22. Devillers T, Jamet M, Barski A, Poydenot V, Bayle-Guillemaud P, Bellet-Amalric E, Cherifi S and Cibert J 2007 Phys. Rev. B 76 205306.
23. Li H, Wu Y, Guo Z, Luo P and Wang S 2006 J. Appl. Phys. 100 103908
24. Tawara Y and Sato V 1963 J. Phys. Soc. Jpn. 18 773