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Volumn 3, Issue 5, 2011, Pages 2247-2255
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Growth of silver nanowires on GaAs wafers
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Author keywords
[No Author keywords available]
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Indexed keywords
AG NANOWIRES;
ANISOTROPIC GROWTH;
AQUEOUS SOLUTIONS;
CLEAN SURFACES;
CONDUCTIVITY VARIATION;
GAAS;
GAAS WAFER;
INTERFACIAL REACTIONS;
LOW CONCENTRATIONS;
ROOM TEMPERATURE;
ROUGH SURFACES;
SEMI-INSULATING GAAS;
SEMI-INSULATING GALLIUM ARSENIDE;
SENSING APPLICATIONS;
SILVER NANOWIRES;
SILVER NITRATES;
SURFACE ELECTRON;
SURFACE-ENHANCED RAMAN SCATTERING;
ADSORPTION;
ELECTRIC CONDUCTIVITY;
GALLIUM ALLOYS;
GALLIUM ARSENIDE;
NANOWIRES;
RAMAN SCATTERING;
SEMICONDUCTING GALLIUM;
SILVER;
SYNTHESIS (CHEMICAL);
ELECTRIC WIRE;
GALLIUM;
GALLIUM ARSENIDE;
NANOMATERIAL;
ORGANOARSENIC DERIVATIVE;
SILVER;
ARTICLE;
CHEMISTRY;
CONFORMATION;
CRYSTALLIZATION;
MACROMOLECULE;
MATERIALS TESTING;
METHODOLOGY;
PARTICLE SIZE;
SURFACE PROPERTY;
ULTRASTRUCTURE;
ARSENICALS;
CRYSTALLIZATION;
GALLIUM;
MACROMOLECULAR SUBSTANCES;
MATERIALS TESTING;
MOLECULAR CONFORMATION;
NANOSTRUCTURES;
PARTICLE SIZE;
SILVER;
SURFACE PROPERTIES;
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EID: 79956104159
PISSN: 20403364
EISSN: 20403372
Source Type: Journal
DOI: 10.1039/c1nr10153f Document Type: Article |
Times cited : (9)
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References (48)
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