Fully integrated 60 GHz transceiver in SiGe BiCMOS, RF modules, and 3.6 Gbit/s OFDM data transmission

International Journal of Microwave and Wireless Technologies

Volumn 3, Issue 2, 2011, Pages 139-145

  Glisic, Srdjan ^a   Scheytt, J Christoph ^a   Sun, Yaoming ^a   Herzel, Frank ^a   Wang, Ruoyu ^a   Schmalz, Klaus ^a   Elkhouly, Mohamed ^a   Choi, Chang Soon ^a  

^a IHP   (Germany)

Author keywords

60 GHz; Receiver; SiGe BiCMOS; Transmitter

Indexed keywords

1DB COMPRESSION POINT; 60 GHZ; 60-GHZ TRANSCEIVERS; BI-CMOS; CHIPSET; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; DATA RATES; DATA TRANSMISSION; ERROR-FREE DATA; FULLY INTEGRATED; HIGH-SPEED WIRELESS COMMUNICATION; IN-PHASE; INTERMEDIATE FREQUENCIES; ISM BANDS; RECEIVER; RF MODULE; SATURATED POWER; SIGE BICMOS; TRANSMISSION DISTANCES;

BICMOS TECHNOLOGY; LOW NOISE AMPLIFIERS; METALLIC COMPOUNDS; MIXERS (MACHINERY); MOS DEVICES; ORTHOGONAL FREQUENCY DIVISION MULTIPLEXING; ORTHOGONAL FUNCTIONS; PHASE LOCKED LOOPS; POWER AMPLIFIERS; QUADRATURE AMPLITUDE MODULATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON ALLOYS; TRANSMITTERS; WIRELESS TELECOMMUNICATION SYSTEMS;

SEMICONDUCTING SILICON;

EID: 79956090631     PISSN: 17590787     EISSN: 17590795     Source Type: Journal    
DOI: 10.1017/S1759078711000286     Document Type: Article

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