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Applied Physics Letters

Volumn 80, Issue 1, 2002, Pages 40-42

Nanovoid-related large redshift of photoluminescence peak energy in hydrogenated amorphous silicon

(7) Han, Daxing a Yue, Guozhen a Wang, Keda a Baugh, Jonathan a Wu, Yue a Xu, Yueqin b Wang, Qi b

a University of North Carolina at Chapel Hill (United States)

b NATIONAL RENEWABLE ENERGY LABORATORY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

HIGHLY STRAINED; HYDROGENATED AMORPHOUS SILICON FILMS; MASS DENSITIES; NANO SCALE; NANO-VOIDS; PEAK ENERGY; PHOTOLUMINESCENCE PEAK ENERGY; PL INTENSITY; RED SHIFT; SILICON DANGLING BOND; TEMPERATURE DEPENDENCE; THERMALIZATION; TUBE-LIKE;

AMORPHOUS FILMS; CHEMICAL BONDS; DANGLING BONDS; HYDROGENATION; PHOTOLUMINESCENCE;

AMORPHOUS SILICON;

EID: 79956053665 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1431396 Document Type: Article

Times cited : (9)

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