High current Ni-ion implantation to synthesize NiSi2 layers on Si with very low resistivity

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 148, Issue 1-4, 1999, Pages 615-620

  Gao, K Y ^a   Liu, B X ^a  

^a TSINGHUA UNIVERSITY   (China)

Author keywords

Defects; Ion implantation; Resistivity; Silicidation

Indexed keywords

CRYSTAL LATTICES; CRYSTAL ORIENTATION; CURRENT DENSITY; ELECTRIC CONDUCTIVITY OF SOLIDS; ION IMPLANTATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON WAFERS; STOICHIOMETRY; SYNTHESIS (CHEMICAL); THERMAL EFFECTS; THERMAL EXPANSION;

METAL VAPOR VACUUM ARCS (MEVVA); NICKEL DISILICIDE; SILICIDATION;

SEMICONDUCTING FILMS;

EID: 0033513769     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(98)00750-2     Document Type: Article

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