Epitaxial growth of dielectric CaCu3Ti4O12 thin films on (001) LaAlO3 by pulsed laser deposition

Applied Physics Letters

Volumn 81, Issue 4, 2002, Pages 631-633

  Lin, Y ^a   Chen, Y B ^a   Garret, T ^a   Liu, S W ^a   Chen, C L ^a   Chen, L ^b   Bontchev, R P ^b   Jacobson, A ^b   Jiang, J C ^c   Meletis, E I ^c   Horwitz, J ^d   Wu, H D ^d  

^a University of Houston   (United States)

^b UNIVERSITY OF HOUSTON   (United States)

^c LOUISIANA STATE UNIVERSITY   (United States)

^d NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AS-GROWN FILMS; EPITAXIALLY GROWN; HIGH DIELECTRIC CONSTANTS; MICRO-STRUCTURAL; POLE FIGURE MEASUREMENTS; PROPERTY MEASUREMENT; ROOM TEMPERATURE; SINGLE CRYSTALLINE QUALITY;

DEPOSITION; DIELECTRIC PROPERTIES; EPITAXIAL GROWTH; LANTHANUM ALLOYS; PULSED LASER DEPOSITION; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; VAPOR DEPOSITION; X RAY DIFFRACTION;

PULSED LASERS;

EID: 79956050423     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1490624     Document Type: Article

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