In situ diffuse reflectance spectroscopy investigation of low-temperature-grown GaAs

Applied Physics Letters

Volumn 80, Issue 12, 2002, Pages 2060-2062

  Zhao, Ri An ^a   Cich, Michael J ^a   Specht, Petra ^a   Weber, Eicke R ^a  

^a No 1760   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANTI-SITE DEFECT; ANTISITES; DIFFUSE REFLECTANCE SPECTROSCOPY; EFFUSION CELLS; GAAS; IN-SITU; INCORPORATION RATES; LOW TEMPERATURES; LOW-TEMPERATURE-GROWN GAAS; LT-GAAS; NON-STOICHIOMETRY; RADIATION HEATING; SUBSTRATE TEMPERATURE;

ARSENIC; POINT DEFECTS; REFLECTION; SEMICONDUCTING GALLIUM; SPECTROSCOPY; TEMPERATURE MEASUREMENT;

GALLIUM ARSENIDE;

EID: 79956047026     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1463215     Document Type: Article

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