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Volumn 80, Issue 14, 2002, Pages 2556-2558

Local electrostatic potential and process-induced boron redistribution in patterned Si/SiGe/Si heterostructures

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX DEVICES; DEVICE FABRICATIONS; DEVICE PROCESSING; DOPANT DIFFUSION; ELECTROSTATIC POTENTIALS; FUNDAMENTAL PARAMETERS; PATTERNED STRUCTURE; PROCESS SIMULATIONS;

EID: 79956046778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467712     Document Type: Article
Times cited : (4)

References (21)
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    • (1987) Rev. Mod. Phys. , vol.59 , pp. 639
    • Tonomura, A.1
  • 2
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    • edited by S. Amelincks, D. van Dyck, J. van Landuyt, and G. van Tendeloo (VCH, Weinheim)
    • H. Lichte, in Handbook of Microscopy, edited by S. Amelincks, D. van Dyck, J. van Landuyt, and G. van Tendeloo (VCH, Weinheim, 1996).
    • (1996) Handbook of Microscopy
    • Lichte, H.1
  • 3
    • 0003907198 scopus 로고    scopus 로고
    • edited by E. Völkl, D. Joy, and L. Allard (Plenum, New York)
    • E. Völkl and M. Lehmann, in Introduction to Electron Holography, edited by E. Völkl, D. Joy, and L. Allard (Plenum, New York, 1999).
    • (1999) Introduction to Electron Holography
    • Völkl1
  • 4
    • 85006886629 scopus 로고    scopus 로고
    • We used a Philips CM200 Lorentz TEM with field emission gun and electron biprism for electron holography
    • We used a Philips CM200 Lorentz TEM with field emission gun and electron biprism for electron holography.
  • 8
    • 0032272380 scopus 로고    scopus 로고
    • IEEE, Piscataway, NJ
    • W.-D. Rau, F. H. Baumann, H.-H. Vuong, B. Heinemann, W. Höppner, C. S. Rafferty, H. Rücker, P. Schwander, and A. Ourmazd, IEDM Tech. Digest (IEEE, Piscataway, NJ, 1998), p. 713.
    • (1998) IEDM Tech. Digest , pp. 713
    • Rau1
  • 9
    • 85006865017 scopus 로고    scopus 로고
    • Methods such as SIMS and x-ray diffraction, which require large sampling regions, can also be used if a laterally homogeneous sample is assumed, or appropriate test structures are available
    • Methods such as SIMS and x-ray diffraction, which require large sampling regions, can also be used if a laterally homogeneous sample is assumed, or appropriate test structures are available.
  • 11
    • 85006927212 scopus 로고    scopus 로고
    • This structure is typical of SiGe HBTs. The performance of such devices depends critically on the details of the boron profile
    • This structure is typical of SiGe HBTs. The performance of such devices depends critically on the details of the boron profile.
  • 13
    • 85006885107 scopus 로고    scopus 로고
    • 2 implant at 45 keV, followed by a 30 s rapid thermal anneal at 950°C. This corresponds to a typical process used to contact the HBT base
    • 2 implant at 45 keV, followed by a 30 s rapid thermal anneal at 950°C. This corresponds to a typical process used to contact the HBT base.
  • 16
    • 85006855649 scopus 로고    scopus 로고
    • The measured decay length for B profile broadening is in agreement with electrical measurements on HBTs. A lateral extension of transient enhanced B out-diffusion of uto 400 nm has been determined for similar doping profiles. See B. Heinemann, D. Knoll, G. Fischer, D. Krüger, G. Lippert, H. J. Osten, H. Rücker, W. Röpke, P. Schley, and B. Tillack, Proc. ESSDERC, edited by H. Grünbacher (Editions Frontieres, Paris
    • The measured decay length for B profile broadening is in agreement with electrical measurements on HBTs. A lateral extension of transient enhanced B out-diffusion of up to 400 nm has been determined for similar doping profiles. See B. Heinemann, D. Knoll, G. Fischer, D. Krüger, G. Lippert, H. J. Osten, H. Rücker, W. Röpke, P. Schley, and B. Tillack, Proc. ESSDERC, edited by H. Grünbacher (Editions Frontieres, Paris, 1997), p. 544.
    • (1997) , pp. 544
  • 17
    • 85006914608 scopus 로고    scopus 로고
    • From the phase shift in the Si substrate region, we deduce a sample thickness of (248±7)nm. A similar measurement in the SiGe region, allowing for the 20% Ge content measured by x-ray diffraction, gives a sample thickness within ±2% of the value in the Si region. This puts an upper limit of ±2% on systematic thickness errors due to variations in the sample thickness
    • From the phase shift in the Si substrate region, we deduce a sample thickness of (248±7)nm. A similar measurement in the SiGe region, allowing for the 20% Ge content measured by x-ray diffraction, gives a sample thickness within ±2% of the value in the Si region. This puts an upper limit of ±2% on systematic thickness errors due to variations in the sample thickness.
  • 20
    • 85006876600 scopus 로고    scopus 로고
    • Two-dimensional doping profiles were calculated using the process simulator PROPHET. We assume that each implanted B ion produces one self-interstitial in the tail of the implanted profile, and that point defects in the amorphized region are removed during regrowth. The damage model was calibrated to fit one-dimensional profiles of the B marker layers
    • Two-dimensional doping profiles were calculated using the process simulator PROPHET. We assume that each implanted B ion produces one self-interstitial in the tail of the implanted profile, and that point defects in the amorphized region are removed during regrowth. The damage model was calibrated to fit one-dimensional profiles of the B marker layers.


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