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H. Lichte, in Handbook of Microscopy, edited by S. Amelincks, D. van Dyck, J. van Landuyt, and G. van Tendeloo (VCH, Weinheim, 1996).
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E. Völkl and M. Lehmann, in Introduction to Electron Holography, edited by E. Völkl, D. Joy, and L. Allard (Plenum, New York, 1999).
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Introduction to Electron Holography
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Völkl1
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85006886629
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We used a Philips CM200 Lorentz TEM with field emission gun and electron biprism for electron holography
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We used a Philips CM200 Lorentz TEM with field emission gun and electron biprism for electron holography.
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6
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prl PRLTAO 0031-9007
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W.-D. Rau, P. Schwander, F. H. Baumann, W. Höppner, and A. Ourmazd, Phys. Rev. Lett. 82, 2614 (1999). prl PRLTAO 0031-9007
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W.-D. Rau, F. H. Baumann, H.-H. Vuong, B. Heinemann, W. Höppner, C. S. Rafferty, H. Rücker, P. Schwander, and A. Ourmazd, IEDM Tech. Digest (IEEE, Piscataway, NJ, 1998), p. 713.
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Rau1
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85006865017
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Methods such as SIMS and x-ray diffraction, which require large sampling regions, can also be used if a laterally homogeneous sample is assumed, or appropriate test structures are available
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Methods such as SIMS and x-ray diffraction, which require large sampling regions, can also be used if a laterally homogeneous sample is assumed, or appropriate test structures are available.
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10
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0001400412
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P. Schwander, C. Kisielowski, M. Seibt, F. H. Baumann, Y. Kim, and A. Ourmazd, Phys. Rev. Lett. 71, 4150 (1993). prl PRLTAO 0031-9007
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Baumann, F.H.4
Kim, Y.5
Ourmazd, A.6
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11
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85006927212
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This structure is typical of SiGe HBTs. The performance of such devices depends critically on the details of the boron profile
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This structure is typical of SiGe HBTs. The performance of such devices depends critically on the details of the boron profile.
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12
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85006876588
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Ref. 8
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D. Knoll, B. Heinemann, H. J. Osten, K. E. Ehwald, B. Tillack, P. Schley, R. Barth, M. Matthes, K. S. Park, Y. Kim, and W. Winkler, in Ref. 8, p. 703.
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Knoll, D.1
Heinemann, B.2
Osten, H.J.3
Ehwald, K.E.4
Tillack, B.5
Schley, P.6
Barth, R.7
Matthes, M.8
Park, K.S.9
Kim, Y.10
Winkler, W.11
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13
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85006885107
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2 implant at 45 keV, followed by a 30 s rapid thermal anneal at 950°C. This corresponds to a typical process used to contact the HBT base
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2 implant at 45 keV, followed by a 30 s rapid thermal anneal at 950°C. This corresponds to a typical process used to contact the HBT base.
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15
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0012246156
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acf ACACEQ 0108-7673
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J. Li, M. R. McCartney, and D. J. Smith, Acta Crystallogr., Sect. A: Found. Crystallogr. 55, 652 (1999). acf ACACEQ 0108-7673
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Li, J.1
McCartney, M.R.2
Smith, D.J.3
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16
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85006855649
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The measured decay length for B profile broadening is in agreement with electrical measurements on HBTs. A lateral extension of transient enhanced B out-diffusion of uto 400 nm has been determined for similar doping profiles. See B. Heinemann, D. Knoll, G. Fischer, D. Krüger, G. Lippert, H. J. Osten, H. Rücker, W. Röpke, P. Schley, and B. Tillack, Proc. ESSDERC, edited by H. Grünbacher (Editions Frontieres, Paris
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The measured decay length for B profile broadening is in agreement with electrical measurements on HBTs. A lateral extension of transient enhanced B out-diffusion of up to 400 nm has been determined for similar doping profiles. See B. Heinemann, D. Knoll, G. Fischer, D. Krüger, G. Lippert, H. J. Osten, H. Rücker, W. Röpke, P. Schley, and B. Tillack, Proc. ESSDERC, edited by H. Grünbacher (Editions Frontieres, Paris, 1997), p. 544.
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(1997)
, pp. 544
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17
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85006914608
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From the phase shift in the Si substrate region, we deduce a sample thickness of (248±7)nm. A similar measurement in the SiGe region, allowing for the 20% Ge content measured by x-ray diffraction, gives a sample thickness within ±2% of the value in the Si region. This puts an upper limit of ±2% on systematic thickness errors due to variations in the sample thickness
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From the phase shift in the Si substrate region, we deduce a sample thickness of (248±7)nm. A similar measurement in the SiGe region, allowing for the 20% Ge content measured by x-ray diffraction, gives a sample thickness within ±2% of the value in the Si region. This puts an upper limit of ±2% on systematic thickness errors due to variations in the sample thickness.
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19
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0000464473
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For a review see, and, jaJAPIAU 0021-8979
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For a review see E. Chason, S. T. Picraux, J. M. Poate, J. O. Borland, M. I. Current, T. Diaz de la Rubia, D. J. Eaglesham, O. W. Holland, M. E. Law, C. W. Magee, J. W. Mayer, J. Melngailis, and A. F. Tasch, J. Appl. Phys. 81, 6513 (1997). jap JAPIAU 0021-8979
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Chason, E.1
Picraux, S.T.2
Poate, J.M.3
Borland, J.O.4
Current, M.I.5
Diaz De La Rubia, T.6
Eaglesham, D.J.7
Holland, O.W.8
Law, M.E.9
Magee, C.W.10
Mayer, J.W.11
Melngailis, J.12
Tasch, A.F.13
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20
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85006876600
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Two-dimensional doping profiles were calculated using the process simulator PROPHET. We assume that each implanted B ion produces one self-interstitial in the tail of the implanted profile, and that point defects in the amorphized region are removed during regrowth. The damage model was calibrated to fit one-dimensional profiles of the B marker layers
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Two-dimensional doping profiles were calculated using the process simulator PROPHET. We assume that each implanted B ion produces one self-interstitial in the tail of the implanted profile, and that point defects in the amorphized region are removed during regrowth. The damage model was calibrated to fit one-dimensional profiles of the B marker layers.
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21
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0001058745
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jaJAPIAU 0021-8979
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S. W. Crowder, C. J. Hsieh, P. B. Griffin, and J. D. Plummer, J. Appl. Phys. 76, 2756 (1994). jap JAPIAU 0021-8979
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Crowder, S.W.1
Hsieh, C.J.2
Griffin, P.B.3
Plummer, J.D.4
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