Local electrostatic potential and process-induced boron redistribution in patterned Si/SiGe/Si heterostructures

Applied Physics Letters

Volumn 80, Issue 14, 2002, Pages 2556-2558

  Orchowski, A ^a   Rau, W D ^a   Rucker H ^a   Heinemann, B ^a   Schwander, P ^a   Tillack, B ^a   Ourmazd, A ^a  

^a IHP   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEX DEVICES; DEVICE FABRICATIONS; DEVICE PROCESSING; DOPANT DIFFUSION; ELECTROSTATIC POTENTIALS; FUNDAMENTAL PARAMETERS; PATTERNED STRUCTURE; PROCESS SIMULATIONS;

BIPOLAR TRANSISTORS; BORON; BORON COMPOUNDS; ELECTROSTATICS;

HETEROJUNCTIONS;

EID: 79956046778     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1467712     Document Type: Article

References (21)

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