Dispersion, refinement, and manipulation of single silicon nanowires

Applied Physics Letters

Volumn 80, Issue 10, 2002, Pages 1812-1814

  He, J Z ^a   Xu, J B ^a   Xu, M S ^a   Xie, Z ^a   Wilson, I H ^a   Ma, X L ^b   Li, Q ^b   Wang, N ^b   Hung, L S ^b   Lee, C S ^b   Lee, S T ^b  

^a CHINESE UNIVERSITY OF HONG KONG   (Hong Kong)

^b CITY UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT SITES; INDUSTRIAL DEVICES; MICROACTUATION; MICROSCOPIC STUDY; MILD ETCHING; PROTOTYPE DEVICES; SCANNING PROBE MICROSCOPE; SILICON NANOWIRES; SINGLE NANOWIRES; TRANSMISSION ELECTRON;

DEFECTS; ELECTROPHORESIS; ETCHING; WIRE;

NANOWIRES;

EID: 79956034793     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1456966     Document Type: Article

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