Pseudodielectric functions of InGaAs alloy films grown on InP

Applied Physics Letters

Volumn 81, Issue 13, 2002, Pages 2367-2369

  Kim, T J ^a   Ihn, Y S ^a   Kim, Y D ^a   Kim, S J ^b   Aspnes, D E ^b   Yao, T ^c   Shim, K ^d   Koo, B H ^e  

^a Kyung Hee University   (South Korea)

^b NORTH CAROLINA STATE UNIVERSITY   (United States)

^c TOHOKU UNIVERSITY   (Japan)

^d Kyonggi University   (South Korea)

^e Changwon National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ALLOY FILM; BEST APPROXIMATIONS; BOWING PARAMETERS; BULK DIELECTRIC; CRITICAL POINTS; INP; LINE SHAPE; OVERLAYERS; PSEUDODIELECTRIC FUNCTIONS; ROOM TEMPERATURE; SOLID-SOURCE MOLECULAR BEAM EPITAXY; TIGHT BINDING MODEL; WET-CHEMICAL ETCHING;

GALLIUM;

WET ETCHING;

EID: 79956033400     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1509093     Document Type: Article

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