Structural characterization of ultra-thin (0 0 1) silicon films bonded onto (0 0 1) silicon wafers: A transmission electron microscopy study

Materials Science in Semiconductor Processing

Volumn 4, Issue 1-3, 2001, Pages 101-104

  Rousseau, K ^a   Rouviere J L ^a   Fournel, F ^a,b   Moriceau, H ^b  

^a CEA GRENOBLE   (France)

^b CEA LETI   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ASSOCIATION REACTIONS; CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); GRAIN BOUNDARIES; PRECIPITATION (CHEMICAL); SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY; ULTRATHIN FILMS;

DIATOMIC INTERFACES; TWIST GRAIN BOUNDARIES;

SEMICONDUCTING FILMS;

EID: 0343026427     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1369-8001(00)00159-1     Document Type: Article

References (11)

1. Leonard D., Pond K., Petroff P.M. Phys Rev B. 50(11):1994;687.
2. Romanov A.E., Petroff P.M., Speck J.S. Appl Phys Lett. 74:1999;2280.
3. Bourret A. Surf Sci. 432:1999;37.
4. Fournel F., Moriceau H., Magnéa N., Eymery J., Rouvière J.L., Rousseau K., Aspar B. Mat Sci Eng B. 73:2000;42.
5. Föll H., Ast D. Phil Mag A. 40:1979;589.
6. Benamara M., Rocher A., Laporte A., Sarrabayrouse G., Lescouzères L., PeyreLavigne A., Fnaiech M., Claverie A. Mat Res Soc Symp Proc. 378:1995;863.
7. Rouvière JL, Rousseau K, Fournel F, Moriceau H. Appl Phys Lett 2000;77(8):1135-7.
8. Ahn K-.Y., Stengl R., Tan T.Y., Gösele U., Smith P. Appl Phys A. 50:1990;85.
9. Schoer E., Hopfe S., Werner P., Gösele U., Duscher G., Rühle M., Tan T.Y. Appl Phys Lett. 70:1997;327.
10. Hirth JP, Lothe J. Theory of dislocations, 2nd ed. New York: Wiley, 1982. p. 731.
11. Bourret A., Thibault J. Philos Mag A. 39:1979;419.