Heterostructure optoelectronic switch with lightcontrollable S-shaped negative differential resistance

Applied Physics Letters

Volumn 72, Issue 9, 1998, Pages 1010-1012

  Guo, Der Feng ^a  

^a DEPARTMENT OF ELECTRONIC ENGINEERING   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC BREAKDOWN; ELECTRONS; FABRICATION; HETEROJUNCTIONS; LIGHT; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES; PERFORMANCE; SEMICONDUCTING GALLIUM ARSENIDE;

AVALANCHE MULTIPLICATION; BARRIER HEIGHT; CARRIER CONFINEMENT; HOLE; INCIDENT LIGHT; NEGATIVE DIFFERENTIAL RESISTANCE; OPTOELECTRONICS SWITCH;

OPTICAL SWITCHES;

EID: 0032473265     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.120949     Document Type: Article

References (10)

1. K. J. Chen, T. Waho, K. Maezawa, and M. Yamamoto, IEEE Electron Device Lett. 17, 309 (1996).
2. J. Shen, S. Tehrahi, H. Goronkin, G. Kramer, and R. Tsui, IEEE Electron Device Lett. 17, 94 (1996).
3. J. Kastrup, H. T. Grahn, K. Ploog, F. Prengel, A. Wacker, and E. Schöll, Appl. Phys. Lett. 65, 1808 (1994).
4. M. J. Kearney, A. Condie, and I. Dale, Electron. Lett. 27, 721 (1991).
5. H. Sakata, K. Utaka, and Y. Matsushima, Electron. Lett. 30, 1792 (1994).
6. S. Hutchinson, M. Carr, R. Gwilliam, M. J. Kelly, and B. J. Sealy, Electron. Lett. 31, 583 (1995).
7. F. Y. Huang and H. Morkoc, Appl. Phys. Lett. 64, 405 (1994).
8. G. W. Taylor, J. G. Simmons, A. Y. Cho, and R. S. Mand, J. Appl. Phys. 59, 596 (1986).
9. G. W. Taylor, R. S. Mand, J. G. Simmons, and A. Y. Cho, Appl. Phys. Lett. 49, 1406 (1986).
10. S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981).