-
1
-
-
0034696977
-
-
Y. Tokura and N. Nagaosa, Science 288, 462 (2000); E. Dagotto et al., Phys. Rep. (to be published).
-
(2000)
Science
, vol.288
, pp. 462
-
-
Tokura, Y.1
Nagaosa, N.2
-
2
-
-
0034696977
-
-
to be published
-
Y. Tokura and N. Nagaosa, Science 288, 462 (2000); E. Dagotto et al., Phys. Rep. (to be published).
-
Phys. Rep.
-
-
Dagotto, E.1
-
3
-
-
0033542412
-
-
M. Uehara et al., Nature (London) 399, 560 (1999); see also M. Ibarra and J. De Teresa, J. Magn. Magn. Mater. 177-181, 846 (1998); D. Louca and T. Egami, Phys. Rev. B 59, 6193 (1999).
-
(1999)
Nature (London)
, vol.399
, pp. 560
-
-
Uehara, M.1
-
4
-
-
18844466618
-
-
M. Uehara et al., Nature (London) 399, 560 (1999); see also M. Ibarra and J. De Teresa, J. Magn. Magn. Mater. 177-181, 846 (1998); D. Louca and T. Egami, Phys. Rev. B 59, 6193 (1999).
-
(1998)
J. Magn. Magn. Mater.
, vol.177-181
, pp. 846
-
-
Ibarra, M.1
De Teresa, J.2
-
5
-
-
0000612977
-
-
M. Uehara et al., Nature (London) 399, 560 (1999); see also M. Ibarra and J. De Teresa, J. Magn. Magn. Mater. 177-181, 846 (1998); D. Louca and T. Egami, Phys. Rev. B 59, 6193 (1999).
-
(1999)
Phys. Rev. B
, vol.59
, pp. 6193
-
-
Louca, D.1
Egami, T.2
-
6
-
-
0033605660
-
-
A. Moreo et al., Science 283, 2034 (1999); S. Yunoki et al., Phys. Rev. Lett. 80, 845 (1998). For analogous ideas in doped AF semiconductors, see E. L. Nagaev, JETP Lett. 16, 558 (1972); V. A. Kashin and E. L. Nagaev, Sov. Phys. JETP 39, 1036 (1974).
-
(1999)
Science
, vol.283
, pp. 2034
-
-
Moreo, A.1
-
7
-
-
0001212627
-
-
A. Moreo et al., Science 283, 2034 (1999); S. Yunoki et al., Phys. Rev. Lett. 80, 845 (1998). For analogous ideas in doped AF semiconductors, see E. L. Nagaev, JETP Lett. 16, 558 (1972); V. A. Kashin and E. L. Nagaev, Sov. Phys. JETP 39, 1036 (1974).
-
(1998)
Phys. Rev. Lett.
, vol.80
, pp. 845
-
-
Yunoki, S.1
-
8
-
-
0033605660
-
-
A. Moreo et al., Science 283, 2034 (1999); S. Yunoki et al., Phys. Rev. Lett. 80, 845 (1998). For analogous ideas in doped AF semiconductors, see E. L. Nagaev, JETP Lett. 16, 558 (1972); V. A. Kashin and E. L. Nagaev, Sov. Phys. JETP 39, 1036 (1974).
-
(1972)
JETP Lett.
, vol.16
, pp. 558
-
-
Nagaev, E.L.1
-
9
-
-
0033605660
-
-
A. Moreo et al., Science 283, 2034 (1999); S. Yunoki et al., Phys. Rev. Lett. 80, 845 (1998). For analogous ideas in doped AF semiconductors, see E. L. Nagaev, JETP Lett. 16, 558 (1972); V. A. Kashin and E. L. Nagaev, Sov. Phys. JETP 39, 1036 (1974).
-
(1974)
Sov. Phys. JETP
, vol.39
, pp. 1036
-
-
Kashin, V.A.1
Nagaev, E.L.2
-
10
-
-
0000588387
-
-
S. Yunoki et al., Phys. Rev. Lett. 81, 5612 (1998); 84, 3714 (2000); T. Hotta et al., ibid. 84, 2477 (2000); J. van den Brink et al., ibid. 83, 5118 (1999).
-
(1998)
Phys. Rev. Lett.
, vol.81
, pp. 5612
-
-
Yunoki, S.1
-
11
-
-
0001128937
-
-
S. Yunoki et al., Phys. Rev. Lett. 81, 5612 (1998); 84, 3714 (2000); T. Hotta et al., ibid. 84, 2477 (2000); J. van den Brink et al., ibid. 83, 5118 (1999).
-
(2000)
Phys. Rev. Lett.
, vol.84
, pp. 3714
-
-
-
12
-
-
0001209118
-
-
S. Yunoki et al., Phys. Rev. Lett. 81, 5612 (1998); 84, 3714 (2000); T. Hotta et al., ibid. 84, 2477 (2000); J. van den Brink et al., ibid. 83, 5118 (1999).
-
(2000)
Phys. Rev. Lett.
, vol.84
, pp. 2477
-
-
Hotta, T.1
-
13
-
-
0000840812
-
-
S. Yunoki et al., Phys. Rev. Lett. 81, 5612 (1998); 84, 3714 (2000); T. Hotta et al., ibid. 84, 2477 (2000); J. van den Brink et al., ibid. 83, 5118 (1999).
-
(1999)
Phys. Rev. Lett.
, vol.83
, pp. 5118
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-
Van Den Brink, J.1
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16
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4243413318
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3 is not due to Anderson localization
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3 is not due to Anderson localization.
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Smolyaninova, V.1
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18
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3843149794
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For a similar approach, see K. H. Kim et al., Phys. Rev. Lett. 84, 2961 (2000). For studies of impurity conduction, see A. Miller and E. Abrahams, Phys. Rev. 120, 745 (1960).
-
(2000)
Phys. Rev. Lett.
, vol.84
, pp. 2961
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-
Kim, K.H.1
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19
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36149027411
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For a similar approach, see K. H. Kim et al., Phys. Rev. Lett. 84, 2961 (2000). For studies of impurity conduction, see A. Miller and E. Abrahams, Phys. Rev. 120, 745 (1960).
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(1960)
Phys. Rev.
, vol.120
, pp. 745
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Miller, A.1
Abrahams, E.2
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20
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0342803609
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l = ∞
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l = ∞.
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21
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0342368678
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cond-mat/0007154
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R. Mathieu et al., cond-mat/0007154.
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Mathieu, R.1
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23
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0342803608
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"Percolative" configurations are rare in small clusters
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"Percolative" configurations are rare in small clusters.
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25
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0001323479
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cond-mat/9905235
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J. A. Vergés, cond-mat/9905235; M. Calderon, J. Vergés, and L. Brey, Phys. Rev. B 59, 4170 (1999).
-
-
-
Vergés, J.A.1
-
26
-
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0001323479
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J. A. Vergés, cond-mat/9905235; M. Calderon, J. Vergés, and L. Brey, Phys. Rev. B 59, 4170 (1999).
-
(1999)
Phys. Rev. B
, vol.59
, pp. 4170
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Calderon, M.1
Vergés, J.2
Brey, L.3
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27
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0343238174
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The finite clusters arc connected to semi-infinite leads using an infinitesimal voltage drop. The self-energy of these leads is known, and C is evaluated using known formulas
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The finite clusters arc connected to semi-infinite leads using an infinitesimal voltage drop. The self-energy of these leads is known, and C is evaluated using known formulas
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28
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0342368677
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Since this is quantum percolation, the study is only in 3D (2D localization leads to zero conductivity)
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Since this is quantum percolation, the study is only in 3D (2D localization leads to zero conductivity).
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29
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0342803607
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It was verified by a finite-size-scaling analysis that the conductances shown in Fig. 3a are in the Ohmic regime
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It was verified by a finite-size-scaling analysis that the conductances shown in Fig. 3a are in the Ohmic regime.
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30
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0342368676
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Similar results were obtained using the two-orbital model [4] in one dimension, near a FM-AF transition [5]
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Similar results were obtained using the two-orbital model [4] in one dimension, near a FM-AF transition [5].
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31
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0001699281
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Our approach also applies to large MR nonmanganite materials, such as the Eu-based compounds [S. Yoon et al., Phys. Rev. B 58, 2795 (1998); E. L. Nagaev, Physics of Magnetic Semiconductors [Mir, Moscow, 1983]; A. Mauger and D. L. Mills, Phys. Rev. Lett. 53, 1594 (1984)].
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(1998)
Phys. Rev. B
, vol.58
, pp. 2795
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Yoon, S.1
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32
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0001699281
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Mir, Moscow
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Our approach also applies to large MR nonmanganite materials, such as the Eu-based compounds [S. Yoon et al., Phys. Rev. B 58, 2795 (1998); E. L. Nagaev, Physics of Magnetic Semiconductors [Mir, Moscow, 1983]; A. Mauger and D. L. Mills, Phys. Rev. Lett. 53, 1594 (1984)].
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(1983)
Physics of Magnetic Semiconductors
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Nagaev, E.L.1
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33
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4243951090
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Our approach also applies to large MR nonmanganite materials, such as the Eu-based compounds [S. Yoon et al., Phys. Rev. B 58, 2795 (1998); E. L. Nagaev, Physics of Magnetic Semiconductors [Mir, Moscow, 1983]; A. Mauger and D. L. Mills, Phys. Rev. Lett. 53, 1594 (1984)].
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(1984)
Phys. Rev. Lett.
, vol.53
, pp. 1594
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Mauger, A.1
Mills, D.L.2
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