Giant cluster coexistence in doped manganites and other compounds

Physical Review Letters

Volumn 84, Issue 24, 2000, Pages 5568-5571

  Moreo, Adriana ^a   Mayr, Matthias ^a   Feiguin, Adrian ^a   Yunoki, Seiji ^a   Dagotto, Elbio ^a  

^a Florida State University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOSITION; DOPING (ADDITIVES); ELECTRONIC DENSITY OF STATES; GROUND STATE; MAGNETIC FIELD EFFECTS; MATHEMATICAL MODELS; ORDER DISORDER TRANSITIONS; OXIDES; RANDOM PROCESSES; SUBSTITUTION REACTIONS; THERMAL EFFECTS;

EQUAL ELECTRONIC DENSITY; FIRST ORDER TRANSITIONS; MANGANESE OXIDE; MANGANITES; METAL INSULATOR TRANSITION; RANDOM FIELD LASING MODEL;

MANGANESE COMPOUNDS;

EID: 4243216891     PISSN: 00319007     EISSN: None     Source Type: Journal    
DOI: 10.1103/PhysRevLett.84.5568     Document Type: Article

References (22)

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12. Simulations with other distributions of random numbers lead to similar results.
13. Open boundary conditions (OBC) were used in Figs. 1d-1f, and periodic boundary conditions (PBC) in Figs, 1a-1c, to show that large cluster formation occurs in both cases.
14. These results are very similar if MC averages are made, i.e., the system is basically frozen into an inhomogeneous ground state with large AF and FM clusters of size ∼10-20a, as in Figs. 1b and 1e.
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