Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs

Journal of Applied Physics

Volumn 81, Issue 8, 1997, Pages 3601-3606

  Chattopadhyay, K ^a   Aubel, J ^a   Sundaram, S ^a   Ehret, J E ^b   Kaspi, R ^b   Evans, Keith R ^b,c  

^a UNIVERSITY OF SOUTH FLORIDA   (United States)

^b AIR FORCE RESEARCH LABORATORY   (United States)

^c Semiconductor Laser International   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000873577     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.365476     Document Type: Article

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