Estimation of the impact of electrostatic discharge on density of states in hydrogenated amorphous silicon thin-film transistors

Applied Physics Letters

Volumn 80, Issue 18, 2002, Pages 3337-3339

  Golo, Natasa Tosic ^a   Van Der Wal, Siebrigje ^a   Kuper, Fred G ^a   Mouthaan, Ton ^a  

^a UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

A-SI:H; DENSITY OF STATE; ESD STRESS; FIELD-EFFECT CONDUCTANCE; GAP STATE; HYDROGENATED AMORPHOUS SILICON (A-SI:H); THRESHOLD STRESS; TRANSMISSION LINE MODELS;

AMORPHOUS FILMS; ELECTROSTATIC DEVICES; ELECTROSTATIC DISCHARGE; HYDROGENATION; THIN FILM TRANSISTORS; TRANSMISSION LINE THEORY;

AMORPHOUS SILICON;

EID: 79956026312     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1476394     Document Type: Article

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