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Volumn 420, Issue , 1996, Pages 263-268

Defect density-of-states in a-Si:H TFTs

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ALGORITHMS; AMORPHOUS SILICON; BAND STRUCTURE; CRYSTAL DEFECTS; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRIC VARIABLES MEASUREMENT; ELECTRONIC DENSITY OF STATES; INTEGRAL EQUATIONS; PHASE TRANSITIONS; RELAXATION PROCESSES;

EID: 0030379689     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-420-263     Document Type: Conference Paper
Times cited : (1)

References (11)
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.