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Volumn 420, Issue , 1996, Pages 263-268
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Defect density-of-states in a-Si:H TFTs
a a a a |
Author keywords
[No Author keywords available]
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Indexed keywords
ACTIVATION ENERGY;
ALGORITHMS;
AMORPHOUS SILICON;
BAND STRUCTURE;
CRYSTAL DEFECTS;
ELECTRIC CONDUCTIVITY;
ELECTRIC CURRENTS;
ELECTRIC VARIABLES MEASUREMENT;
ELECTRONIC DENSITY OF STATES;
INTEGRAL EQUATIONS;
PHASE TRANSITIONS;
RELAXATION PROCESSES;
DEFECT TRANSFORMATIONS;
DRAIN CURRENT;
FIELD EFFECT CONDUCTIVITY;
FLAT BAND VOLTAGE;
QUASI STATIC TRANSFER CHARACTERISTICS;
SHORT TIME CURRENT RELAXATION;
THIN FILM TRANSISTORS;
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EID: 0030379689
PISSN: 02729172
EISSN: None
Source Type: Conference Proceeding
DOI: 10.1557/proc-420-263 Document Type: Conference Paper |
Times cited : (1)
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References (11)
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