SCOPUS 정보 검색 플랫폼

Volumn 43-44, Issue , 1998, Pages 599-603

Schottky contact with dimensions less than 0.5 μm2

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0346940321 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/S0167-9317(98)00232-9 Document Type: Article

Times cited : (3)

References (6)

1
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- InGaAs microwave power transistors
- G.A. Johnson, V.I. Kapoor, M. Shokrany, L.I. Meesick, InGaAs microwave power transistors, IEEE Trans. MTT 39(7) (1991) 1069.
- (1991) IEEE Trans. MTT , vol.39 , Issue.7 , pp. 1069
- Johnson, G.A.¹ Kapoor, V.I.² Shokrany, M.³ Meesick, L.I.⁴

2
- 0029375811
- High sensitivity InP based monolithically p-i-n HEMT receiver OEICS gb/s
- W. Kuebart, J.N. Reemtsma, D. Kaiser et al, High sensitivity InP based monolithically p-i-n HEMT receiver OEICS gb/s, IEEE Trans. MTT 43(9) (1995) 2334.
- (1995) IEEE Trans. MTT , vol.43 , Issue.9 , pp. 2334
- Kuebart, W.¹ Reemtsma, J.N.² Kaiser, D.³

3
- 0347088361
- Fabrication of sub 0.5 mm GaAs Schottky diode
- H. Takao, N. Inoue, Fabrication of sub 0.5 mm GaAs Schottky diode, Microelectron. Engrg. 11 (1990) 105.
- (1990) Microelectron. Engrg. , vol.11 , pp. 105
- Takao, H.¹ Inoue, N.²

4
- 0347718767
- M. Henini, 4th International Conference on Atomic Layer Epitaxy, III-Vs Review, vol. 9, No. 6, 1996, p. 40.
- (1996) 4th International Conference on Atomic Layer Epitaxy, III-Vs Review , vol.9 , Issue.6 , pp. 40
- Henini, M.¹

5
- 0345826976
- 2 to 8 GHz high gain monolithically feedback amplifier
- M. Piolo, C. Barratt, 2 to 8 GHz high gain monolithically feedback amplifier, Microwave J. 32(8) (1989) 127.
- (1989) Microwave J. , vol.32 , Issue.8 , pp. 127
- Piolo, M.¹ Barratt, C.²

6
- 0024768050
- Liquid phase epitaxy of GaAs and AlGaAs
- N.S. Peev, Liquid phase epitaxy of GaAs and AlGaAs, J. Cryst. Growth 98 (1989) 499-503.
- (1989) J. Cryst. Growth , vol.98 , pp. 499-503
- Peev, N.S.¹

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