New scanning photoluminescence technique for quantitative mapping the surface recombination velocity in InP and related materials

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 2 B, 1999, Pages 992-995

  Krawczyk, Stanislas ^a   Bejar, Moez ^a   Khoukh, Abdelaziz ^b   Blanchet, Robert ^a   Sermage, Bernard ^c   Cui, Delong ^d   Pavlidis, Dimitris ^d  

^a INSTITUT DES NANOTECHNOLOGIES DE LYON   (France)

^b FACULTÉ DES SCIENCES   (Morocco)

^c ORANGE LABS   (France)

^d UNIVERSITY OF MICHIGAN   (United States)

Author keywords

Bulk lifetime of carriers; Doping concentration; Scanning photoluminescence; Surface recombination velocity

Indexed keywords

CARRIER CONCENTRATION; ELECTRONIC DENSITY OF STATES; HETEROJUNCTIONS; NONDESTRUCTIVE EXAMINATION; NUMERICAL METHODS; OPTICAL VARIABLES MEASUREMENT; PHOTOLUMINESCENCE; SEMICONDUCTOR DOPING; SURFACE PROPERTIES;

DOPING CONCENTRATION; NONDESTRUCTIVE QUANTITATIVE MAPPING; SCANNING PHOTOLUMINESCENCE MEASUREMENT; SURFACE RECOMBINATION;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0032671426     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.38.992     Document Type: Article

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