Longitudinal carrier density measurement of high power broad area laser diodes

Applied Physics Letters

Volumn 80, Issue 1, 2002, Pages 19-21

  Rinner, F ^a   Rogg, J ^a   Friedmann, P ^a   Mikulla, M ^a   Weimann, G ^a   Poprawe, R ^b  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

^b FRAUNHOFER INSTITUTE FOR LASER TECHNOLOGY   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

BROAD-AREA LASER DIODE; BROAD-AREA SEMICONDUCTOR LASERS; CARRIER DISTRIBUTIONS; HIGH-POWER; HIGH-REFLECTIVITY COATINGS; INGAALAS;

CARRIER CONCENTRATION; SEMICONDUCTOR DIODES;

SEMICONDUCTOR LASERS;

EID: 79956007258     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1430264     Document Type: Article

References (5)

1. M. Behringer, G. Herrmann, S. Grötsch, W. Teich, J. Luft, B. Acklin, L. Korte, C. Hanke, and M. Marchiano, SPIE Photon. West 4287, 83 (2001).
2. A. J. Bennett, R. D. Clayton, and J. M. Xu, J. Appl. Phys. 83, 3784 (1998). jap JAPIAU 0021-8979
3. F. Girardin and G. H. Guang, IEEE J. Sel. Top. Quantum Electron. 3, 461 (1997). isq IJSQEN 1077-260X
4. L. A. Coldren and S. W. Corzine, Diode Lasers and Photonic Integrated Circuits (Wiley, New York, 1995).
5. G. P. Agrawal and N. K. Dutta, Semiconductor Lasers (Van Nostrand-Reinhold, New York, 1993).