Characterization of semiconductor lasers by spontaneous emission measurements

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 3, Issue 2, 1997, Pages 461-470

  Girardin, François ^a,b,d   Duan, Guang Hua ^a,c,e,f,g  

^a TELECOM PARISTECH   (France)

^b ETH ZURICH   (Switzerland)

^c IEEE

^d Ecole Supérieure d'Optique   (Switzerland)

^e XIDIAN UNIVERSITY   (China)

^f UNIVERSITÉ PARIS SACLAY   (France)

^g Guilin Institute of Optical Communications   (China)

Author keywords

Measurement; Quantum wells; Semiconductor lasers; Spectrum analysis; Spontaneous emission

Indexed keywords

DISTRIBUTED FEEDBACK LASERS; LIGHT EMISSION; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR QUANTUM WELLS; SPECTRUM ANALYSIS;

SPATIAL HOLE BURNING; SPONTANEOUS EMISSION;

SEMICONDUCTOR LASERS;

EID: 0031108391     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.605694     Document Type: Article

References (75)

1. G. P. Agrawal and N. K. Dutta, Long Wavelength Semiconductor Lasers. New York: Van Nostrand Reinhold, 1986.
2. V. P. Gribkovskii and V. A. Samoilyukovich, "Determination of the amplification coefficient, luminescence power, and separation between Fermi quasilevels in injection lasers," Zhurnal Prikladnoi Spektroskopii, vol. 11, pp. 838-841, 1969.
3. B. W. Hakki and T. L. Paoli, "Gain spectra in GaAs double-heterostructure injection lasers," J. Appl. Phys., vol. 46, pp. 1299-1306, Mar. 1975.
4. C. H. Henry, R. A. Logan, and K. A. Bertness, "Measurement of spectrum, bias dependence, and intensity of spontaneous emission in GaAs lasers," J. Appl. Phys., vol. 52, pp. 4453-4456, 1981.
5. _, "Spectral dependence of the change in refractive index due to carrier injection in GaAs lasers," J. Appl. Phys., vol. 52, pp. 4457-4461, 1981.
6. C. H. Henry, R. A. Logan, H. Temkin, and F. R. Merritt, "Absorption, emission and gain spectra of 1.3 μm in GaAsP Quaternary lasers," IEEE J. Quantum Electron., vol. QE-19, pp. 941-946, 1983.
7. J. Shah, R. F. Leheny, R. E. Nahory, and H. Temkin, "Hot-carrier in 1.3 μ InGaAsP light emitting diodes," Appl. Phys. Lett., vol. 39, pp. 618-620, 1981.
8. C. H. Henry, R. A. Logan, and F. R. Merritt, "Measurement of gain and absorption spectra in AlGaAs buried heterostructure lasers," J. Appl. Phys., vol. 51, pp. 3042-3050, 1980.
9. R. O. Miles, M. A. Dupertuis, F. K. Reinhart, and P. M. Brosson, "Gain measurements in InGaAs/InGaAsP multiquantum-well broad-area lasers," Proc. Inst. Elect. Eng., vol. 139, pt. J., pp. 33-38, 1992.
10. P. Blood, A. I. Kucharska, J. P. Jacobs, and K. Griffiths, "Measurement and calculation of spontaneous recombination current and optical gain in GaAs-AlGaAs quantum-well structures," J. Appl. Phys., vol. 70, pp. 1144-1156, 1991.
11. A. A. Bernussi, H. Temkin, D. L. Coblentz, and R. A. Logan, "Effect of barrier recombination on the high temperature performance of quaternary multiquantum well lasers," Appl. Phys. Lett., vol. 66, pp. 67-69, 1995.
12. M. Yamanishi, I. Suemune, K. Nonomure, and N. Mikoshiba, "Holeburnings observed at high energy tails in spontaneous emission spectra from 1.3 μm InGaAsP/InP lasers," Jpn. J. Appl. Phys., vol. 21, pp. L240-L242, 1982.
13. B. Etienne, J. Shah, R. F. Leheny, and R. E. Nahory, "Influence of hot carriers on the temperature dependence of threshold in 1.3-μm InGaAsP lasers," Appl. Phys. Lett., vol. 41, pp. 1018-1020, 1982.
14. M. P. Kesler, C. S. Harder, and E. E. Latta, "Carrier heating in AlGaAs single quantum well laser diodes," Appl. Phys. Lett., vol. 59, pp. 2775-2777, 1991.
15. J. Braithwaite, M. Silver, V. A. Wilkinson, E. P. O'Reilly, and A. R. Adams, "Role of radiative and nonradiative processes on the temperature sensitivity of strained and unstrained 1.5 μm InGaAs(P) quantum well lasers," Appl. Phys. Lett., vol. 67, pp. 3546-3548, 1995.
16. F. Girardin, G.-H. Duan, P. Gallion, A. Talneau, and A. Ougazzaden, "Experimental investigation of the relative importance of carrier heating and spectral-hole-burning on nonlinear gain in bulk and strained multiquantum-well 1.55 μm lasers," Appl. Phys. Lett., vol. 67, pp. 771-773, 1995.
17. I. Joindot and J. L. Beylat, "Intervalence band absorption coefficient measurements in bulk layer, strained and unstrained MQW 1.55 μm semiconductor lasers," Electron. Lett., vol. 29, pp. 604-605, 1993.
18. J. Lacourse and R. Olshansky, "Observation of strong carrier density increase above threshold and its effect on P-I and I-V characteristics of 1.3 μm InGaAsP lasers," in Proc. IEEE Laser Conf., Boston, MA, 1988, pp. 206-207.
19. M. Yamanishi, I. Suemune, K. Nonomura, and N. Mikoshiba, "Spectral hole burnings at high energy tails in spontaneous emission and hot carrier relaxation in InGaAsP lasers," IEEE J. Quantum Electron., vol. QE-19, pp. 924-929, 1983.
20. I. Joindot, "Optical properties of the buried waveguide in a bistable InGaAsP semiconductor laser," Appl. Phys. Lett., vol. 61, pp. 1880-1882, 1992.
21. F. Girardin, G.-H. Duan, C. Chabran, P. Gallion, M. Blez, and M. Allovon, "Determination of nonlinear gain coefficient of semiconductor lasers from above threshold spontaneous emission measurement," IEEE Photon. Technol. Lett., vol. 6, pp. 894-896, 1994.
22. A. A. Bernussi, H. Temkin, D. L. Coblentz, and R. A. Logan, "Gain nonlinearity and its temperature dependence in bulk and quantum-well quaternary lasers," IEEE Photon. Technol. Lett., vol. 7, pp. 348-350, 1995.
23. H. Hirayama, J. Yoshida, Y. Miyake, and M. Asada, "Carrier capture time and its effect on the efficiency of quantum-well lasers," IEEE J. Quantum Electron., vol. 30, pp. 54-62, 1994.
24. _, "Estimation of carrier capture time of quantum-well lasers by spontaneous emission spectra," Appl. Phys. Lett., vol. 61, pp. 2398-2400, 1992.
25. N. Tessler, R. Nagar, D. Abraham, G. Eisenstein, U. Koren, and G. Raybon, "Coupling between barrier and quantum well energy states in a multiple quantum well optical amplifier," Appl. Phys. Lett., vol. 60, pp. 665-667, 1992.
26. N. Tessler, R. Nagar, G. Eisenstein, S. Chandrasekhar, C. H. Joyner, A. G. Dentai, U. Koren, and G. Raybon, "Nonequilibrium effects in quantum well lasers," Appl. Phys. Lett., vol. 61, pp. 2383-2385, 1992, and references therein.
27. T. Fukushima, H. Shimizu, K. Nishikata, Y. Hirayama, and M. Irikawa, "Carrier confinement by multiple quantum barriers in 1.55 μm strained GaInAs/AlGaInAs quantum well lasers," Appl. Phys. Lett., vol. 66, pp. 2025-2027, 1995.
28. T.-C. Wu, D. Vassilovski, D. Cutrer, S. Kan, and K. Y. Lau, "Novel spontaneous emission measurement technique for resolving the carrier-transport effect," in CLEO'95, Baltimore, MD, 1995, p. 281.
29. M. P. Kesler and C. S. Harder, "Excitonic effects in gain and index in GaAlAs quantum well lasers," Appl. Phys. Lett., vol. 57, pp. 123-125, 1990.
30. P. Blood, A. I. Kucharska, C. T. Foxon, and K. Griffiths, "Temperature dependence of spontaneous emission in GaAs-AlGaAs quantum well lasers," Appl. Phys. Lett., vol. 55, pp. 1167-1169, 1989.
31. M. P. Kesler and C. S. Harder, "Spontaneous emission and gain in GaAlAs quantum well lasers," IEEE J. Quantum Electron., vol. 27, pp. 1812-1816, 1991.
32. F. P. Dabkowski, A. K. Chin, P. Gavrilovic, S. Alie, and D. M. Beyea, "Temperature profile along the cavity axis of high power quantum well lasers during operation," Appl. Phys. Lett., vol. 64, pp. 13-15, 1994.
33. X. Wang and S. D. Hersee, "Direct observation of filamentation and temperature distribution in high-power semiconductor lasers," in CLEO'95, Baltimore, MD, 1995, pp. 354-355.
34. H. Brugger and P. W. Epperlein, "Mapping of local temperatures on mirrors of GaAs/AlGaAs laser diodes," Appl. Phys. Lett., vol. 56, pp. 1049-1051, 1990.
35. xAs electroluminescent layers," J. Appl. Phys., vol. 46, pp. 1739-1743, 1975.
36. W. W. Fang, C. G. Bethea, Y. K. Chen, and S. L. Chuang, "Longitudinal spatial inhomogeneities in high-power semiconductor lasers," IEEE J. Select. Topics Quantum Electron., vol. 1, pp. 117-127, 1995.
37. J. E. Hayward and D. T. Cassidy, "Correlation between experiments to measure scattering centers in 1.3 μm semiconductor diode lasers," IEEE J. Quantum Electron., vol. 29, pp. 2173-2177, 1993.
38. D. T. Cassidy and F. H. Peters, "Spontaneous emission, scattering, and the spectral properties of semiconductor diode lasers," IEEE J. Quantum Electron., vol. 28, pp. 785-791, 1992.
39. F. H. Peters and D. T. Cassidy, "Strain and scattering related spectral output of 1.3 μm InGaAsP semiconductor diode lasers," Appl. Opt., vol. 30, pp. 1036-1041, 1991.
40. _, "Spatially and polarization resolved electroluminescence of 1.3 μm InGaAsP semiconductor diode lasers," Appl. Opt., vol. 28, pp. 3744-3750, 1989.
41. M. R. Phillips, T. E. Darcie, and E. J. Flynn, "Experimental measure of dynamic spatial-hole burning in DFB lasers," IEEE Photon. Technol. Lett., vol. 4, pp. 1201-1203, 1992.
42. M. R. Phillips, E. J. Flynn, and T. E. Darcie, "Measured spatial hole burning and frequency chirp in 1.3 mm DFB and Fabry-Perot lasers," in CLEO' 93, 1993, pp. 30-31.
43. L. J. P. Ketelsen, I. Hoshino, and D. A. Ackerman, "The role of axially nonuniform carrier density in altering the TE-TE gain margin in InGaAsP-InP DFB lasers," IEEE J. Quantum Electron., vol. 27, pp. 957-964, 1991.
44. F. Girardin, G.-H. Duan, and A. Talneau, "Modeling and measurement of spatial-hole-burning applied to amplitude modulated coupling distributed feedback," IEEE J. Quantum Electron., vol. 31, pp. 834-841, 1995.
45. F. Girardin, G.-H. Duan, P. Gallion, A. Talneau, and A. Ougazzaden, "Experimental evidence of nonlinear gain and spatial-hole-burning in 1.55 μm distributed feedback lasers," in CLEO'95, Baltimore, MD, 1995.
46. W. Fang, C. G. Bethea, Y. K. Chen, and S. L. Chuang, "Spatial and spectral inhomogeneities in high-power semiconductor lasers," in CLEO'95, Baltimore, MD, 1995, pp. 353-354.
47. C. H. Henry, "Theory of spontaneous emission noise in open resonators and its application to lasers and optical amplifiers," J. Lightwave Technol., vol. LT-4, pp. 288-297, Mar. 1986.
48. G.-H. Duan, "A generalized noise analysis of spatially inhomogeneous laser amplifiers," Opt. Lett., pp. 275-277, Feb. 1993.
49. F. Girardin, Ecole Nationale Supérieure des Télécommunications, Ph.D. dissertation, Paris, France, 1995.
50. N. K. Dutta, R. J. Nelson, and P. A. Barnes, "Temperature dependence of threshold and electrical characteristics of InGaAsP-InP DH lasers," Electron. Lett., vol. 16, pp. 43-44, 1980.
51. G. H. Glover, "Energy relaxation times in GaAs and InP," Appl. Phys. Lett., vol. 21, pp. 409-411, 1972.
52. M. Willatzen, A. Uskov, J. Mørk, H. Olesen, B. Tromborg, and A.-P. Jauho, "Nonlinear gain suppression in semiconductor lasers due to carrier heating," IEEE Photon. Technol. Lett., vol. 3, pp. 606-609, 1991.
53. M. Irikawa, H. Shimizu, T. Fukushima, K. Nishikata, and Y. Hirayama, "Strained GaInAs-AlGaInAs 1.5 μm wavelength multiquantum-well lasers loaded with GaInAs-AlInAs multiquantum-well barriers at the p-side optical confinement layer," IEEE J. Select. Topics Quantum. Electron., vol. 1, pp. 285-292, 1995.
54. A. Sugimura, "Auger recombination effect on threshold current of InGaAsP quantum well lasers," IEEE J. Quantum Electron., vol. QE-19, pp. 932-941, 1983.
55. M. Asada, A. Kameyama, and Y. Suematsu, "Gain and intervalence band absorption in quantum-well lasers," IEEE J. Quantum Electron., vol. QE-20, pp. 745-753, 1984.
56. S. Weiss, J. M. Wiesenfeld, D. S. Chemla, G. Raybon, G. Sucha, M. Wegener, G. Eisenstein, C. A. Burrus, A. G. Dentai, U. Koren, B. I. Miller, H. Temkin, R. A. Logan, and T. Tanbun-Ek, "Carrier capture times in 1.5 μm multiple quantum well optical amplifiers," Appl. Phys. Lett., vol. 60, pp. 9-11, 1992.
57. R. Nagarajan, "Carrier transport effects in quantum well lasers: An overview," Opt. Quantum Electron., vol. 26, pp. 647-666, 1994.
58. M. Willatzen, T. Takahashi, and Y. Arakawa, "Nonlinear effects due to carrier heating and spectral hole burning in strained-quantum-well lasers," IEEE Photon. Technol. Lett., vol. 4, pp. 682-684, 1992.
59. L. D. Westbrook, I. D. Henning, A. W. Nelson, and P. J. Fiddyment, "Spectral properties of strongly coupled 1.5 μm DFB laser diodes," IEEE J. Quantum Electron., vol. QE-21, pp. 512-518, June 1985.
60. L. J. Ketelsen, I. Hoshino, and D. A. Ackerman, "Experimental and theoretical evaluation of the CW suppression of TE side modes in conventional 1.5 μm InP-InGaAsP distributed feedback lasers," IEEE J. Quantum Electron., vol. 27, pp. 965-975, Apr. 1991.
61. H. Soda, Y. Kotaki, H. Sudo, H. Ishikawa, S. Yamakoshi, and H. Imai, "Stability in single longitudinal mode operation in GaInAsP/InP Phase adjusted DFB lasers," IEEE J. Quantum Electron., vol. 23, pp. 804-814, 1987.
62. J. E. Bowers et al., "Microwave intensity and frequency modulation of heteroepitaxial-ridge-overgrown DFB lasers," Appl. Phys. Lett., vol. 46, pp. 233-235, 1985.
63. G.-H. Duan, P. Gallion, and G. P. Agrawal, "Dynamic and noise properties of tunable multielectrode semiconductor lasers including spatial hole burning and nonlinear gain," IEEE J. Quantum Electron., vol. 29, pp. 844-855, 1993.
64. J. E. A. Whiteaway, B. Garrett, G. H. B. Thompson, A. J. Collar, C. J. Armistead, and M. J. Fice, "The static and dynamic characteristics of single and multiple phase-shifted DFB laser structures," IEEE J. Quantum Electron., vol. 28, pp. 1277-1293, 1992.
65. L. J. P. Ketelsen, I. Hoshino, and D. A. Ackerman, "Experimental and theoretical evaluation of the CW suppression of TE side modes in conventional 1.55 μm InGaAsP-InP DFB lasers," IEEE J. Quantum Electron., vol. 27, pp. 965-975, 1991.
66. H. E. Lassen. H. Olesen, and B. Tromborg, "Gain compression and asymmetric gain due to the Bragg grating induced by the standing waves in Fabry-Perot lasers," IEEE Photon. Technol. Lett., vol. 1, pp. 261-263, 1989.
67. H. Kogelnik and C. V. Shank, "Coupled-wave theory of DFB lasers," J. Appl. Phys., vol. 43, pp. 2327-2335, 1972.
68. H. A. Haus and C. V. Shank, "Antisymmetric taper of distributed feedback lasers," IEEE J. Quantum Electron., vol. QE-12, pp. 532-539, 1976.
69. X. Pan, H. Olesen, and B. Tromborg, "A theorical model of multielectrobe DBR lasers," IEEE J. Quantum Electron., vol. 24, pp. 2423-2432, 1988.
70. K. Utaka, S. Akiba, K. Sakai, and Y. Matsushima, "Effect of mirror facets on lasing characteristics of DFB InGaAsP/InP laser diodes at 1.5 μm range," IEEE J. Quantum Electron., vol. QE-20, 1984.
71. A. Talneau, J. Charil, A. Ougazzaden, and J. C. Bouley, "High-power operation of phase-shifted DFB lasers with amplitude modulated coupling coefficient," Electron. Lett., vol. 28, pp. 1395-1396, 1992.
72. M. Quillec, M. Allovon, F. Brillouet, A. Gloukhian, J. P. Praseuth, and B. Sermage, "Very low threshold current density GaInAs/AlGaInAs MQW lasers made by phosphorus-free mbe and operating in 1.5-1.6 μm range," Electron. Lett., vol. 25, 1989.
73. C. B. Su, V. Lanzisera, and R. Olshansky, "Measurement of nonlinear gain from FM modulation index of InGaAsP lasers," Electron. Lett., vol. 21, pp. 893-895, 1985.
74. G. P. Agrawal, "Gain nonlinearities in semiconductor lasers: Theory and application to distributed feedback lasers," IEEE J. Quantum Electron., vol. QE-23, 1987.
75. J. Huang and L. W. Casperson, "Gain and saturation in semiconductor lasers," Opt. Quantum Electron., vol. 25, pp. 369-390, 1993.