Probing the step structure of buried metal/semiconductor interfaces using quantized electron states: The case of Pb on Si(111) 6×6-Au

Applied Physics Letters

Volumn 81, Issue 11, 2002, Pages 2005-2007

  Yu, Hongbin ^a   Jiang, C S ^a   Ebert, Ph ^b   Shih, C K ^a  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER; METAL/SEMICONDUCTOR INTERFACE; QUANTUM-WELL STATE; SCANNING TUNNELING MICROSCOPY AND SPECTROSCOPY; SI (1 1 1); STEP HEIGHT; STEP STRUCTURE;

ATOMIC SPECTROSCOPY; SCANNING TUNNELING MICROSCOPY;

LEAD;

EID: 79955990374     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1506404     Document Type: Article

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