Role of defect centers in recombination processes in GaN monocrystals

Applied Physics Letters

Volumn 80, Issue 16, 2002, Pages 2824-2826

  Joshi, N V ^a   Cros, A ^a   Cantarero, A ^a   Medina, H ^b   Ambacher, O ^c   Stutzmann, M ^c  

^a UNIVERSITY OF VALENCIA   (Spain)

^b UNIVERSIDAD DE LOS ANDES   (Venezuela)

^c WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CONFOCAL FLUORESCENCE; DEFECT CENTERS; MICROSCOPIC STUDY; MONO-CRYSTALS; RADIATIVE RECOMBINATION; RECOMBINATION PROCESS; THREE DIMENSIONAL IMAGES;

GALLIUM NITRIDE; MANGANESE; MOLECULAR BEAM EPITAXY; THREE DIMENSIONAL;

DEFECTS;

EID: 79955987860     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1471938     Document Type: Article

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