Fabrication and properties of low-temperature (≤600°C) processed n-type nanocrystalline SiC/p-type crystalline Si heterojunction diodes

Applied Physics Letters

Volumn 80, Issue 20, 2002, Pages 3772-3774

  Kerdiles, S ^a   Berthelot, A ^a   Rizk, R ^a   Pichon, L ^b  

^a LERMAT Laboratoire d'Etude et de Recherche sur les Materiaux   (France)

^b Centre National de la Recherche Scientifique   (France)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE SIZE; CRYSTALLINE SI; HETEROJUNCTION DIODES; HYDROGEN PLASMAS; LOW TEMPERATURES; LOW-LEAKAGE CURRENT; NANOCRYSTALLINES; POOLE-FRENKEL EFFECT; RECTIFICATION RATIO; THERMAL EMISSIONS;

HETEROJUNCTIONS; HYDROGEN; SEMICONDUCTOR DIODES; SILICON CARBIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955986336     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1480474     Document Type: Article

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