SCOPUS 정보 검색 플랫폼

Journal of Electronic Materials

Volumn 40, Issue 5, 2011, Pages 830-834

Effect of Sb doping on the thermoelectric properties of Mg 2Si 0.7Sn 0.3 solid solutions

(5) Gao, H L a Liu, X X a Zhu, T J a Yang, S H a Zhao, X B a

a ZHEJIANG UNIVERSITY (China)

Author keywords

fabrication method; Sb doping; solid solution; Thermoelectric material

Indexed keywords

BAND GAPS; DIFFERENT PROCESS; FABRICATION METHOD; HOT-PRESS SINTERING; INDUCTION MELTING; POWER FACTORS; SB DOPING; SB-DOPED; SYNTHESIS METHOD; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC MATERIAL; THERMOELECTRIC PROPERTIES; UNDOPED MATERIAL;

CARRIER CONCENTRATION; DOPING (ADDITIVES); ELECTRIC POWER FACTOR; SILICON; SINTERING; SOLIDIFICATION; SYNTHESIS (CHEMICAL); THERMOELECTRIC EQUIPMENT; TIN;

SOLID SOLUTIONS;

EID: 79955922449 PISSN: 03615235 EISSN: None Source Type: Journal
DOI: 10.1007/s11664-011-1584-2 Document Type: Conference Paper

Times cited : (38)

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