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Applied Physics B: Lasers and Optics

Volumn 103, Issue 1, 2011, Pages 137-144

Broadening of upper polariton branch in GaAs, GaN, and ZnO semiconductor microcavities

(3) Lin, S C a Chen, J R a Lu, T C a

a NATIONAL CHIAO TUNG UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION COEFFICIENTS; ACTIVE LAYER; DETUNINGS; EXCITON-BINDING ENERGY; GAAS; INHOMOGENEOUS BROADENING; LOWER POLARITON BRANCHES; MULTIPLE QUANTUM WELLS; NUMERICAL SIMULATION; OPTICAL CAVITIES; PHYSICAL MECHANISM; POLARITONS; SCATTERING STATE; SEMICONDUCTOR MICROCAVITIES; STRONG COUPLING; WIDE BANDGAP MATERIALS; WIDE-BAND-GAP SEMICONDUCTOR; ZNO;

ABSORPTION; BINDING ENERGY; ENERGY GAP; EXCITONS; GALLIUM ALLOYS; GALLIUM ARSENIDE; MICROCAVITIES; PHONONS; PHOTONS; QUANTUM THEORY; SEMICONDUCTING GALLIUM; SEMICONDUCTOR COUNTERS; SEMICONDUCTOR QUANTUM WELLS; ZINC OXIDE;

GALLIUM NITRIDE;

EID: 79955895320 PISSN: 09462171 EISSN: None Source Type: Journal
DOI: 10.1007/s00340-010-4175-7 Document Type: Article

Times cited : (6)

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