Thermoelectric behavior of Sb- and Al-doped n-type Mg 2Si device under large temperature differences

Journal of Electronic Materials

Volumn 40, Issue 5, 2011, Pages 629-634

  Sakamoto, Tatsuya ^a   Iida, Tsutomu ^a   Kurosaki, Shota ^a   Yano, Kenji ^a   Taguchi, Hirohisa ^a   Nishio, Keishi ^a   Takanashi, Yoshifumi ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

magnesium silicide; Thermoelectric material

Indexed keywords

AGING TESTS; HIGHER TEMPERATURES; MAGNESIUM SILICIDES; OUTPUT CURRENT; OUTPUT POWER; POLYCRYSTALLINE; SB-DOPED; SI DEVICES; SINTERING PROCESS; TEMPERATURE DIFFERENCES; THERMODYNAMICALLY STABLE; THERMOELECTRIC MATERIAL;

ALUMINUM; DROPS; EQUIPMENT; MAGNESIUM; SILICIDES; SINTERING; TESTING;

SILICON;

EID: 79955882673     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-010-1489-5     Document Type: Conference Paper

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