Crystal growth of Mg2Si by the vertical bridgman method and the doping effect of bi and AI on thermoelectric characteristics

Materials Research Society Symposium Proceedings

Volumn 1044, Issue , 2008, Pages 247-252

  Fukano, Masataka ^a   Iida, Tsutomu ^a   Makino, Kenichiro ^a   Akasaka, Masayasu ^a   Oguni, Yohei ^a   Takanashi, Yoshifumi ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 54749096003     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Terry M, Tritt and M.A. Subramanian, MRS Bull. 31, 188 (2006).
2. Victor E.Boriseneko, Semiconducting Silicide, (Springer, Berlin, 2000), p. 285.
3. 2Si Single Crystals. Phys. Rev. 109, 1909 (1958).
4. S. Bose, H.N. Acharya, and H.D. Banerjee : Electrocal, thermal, thermoelectric and related properties of magnesium silicide semiconductor prepared from rice husk. J. Mater. Sci. 28, 5461 (1993).
5. x(x=0.0̃0.4) Solid Solution Semiconductors. Mater. Trans. JIM. 33, 845 (1992).
6. 2Si by vertical Bridgman method and thermoelectric characteristics. J. Crystal Growth. 304, 196 (2007).
7. P. Villars, and L.D. Calvert, Pearson's Handbook of Crystallographic Data for Intermetallic Phases, 2nd Ed, vol. 4, (ASM international, OH, 1991) p. 4307.
8. C. Kittel, Introduction to Solid State Physics. 8th ed. (Wiley, NJ, 2005), p. 156 and 205.