Electrically driven lasing in light-emitting devices composed of n-ZnO and p-Si nanowires

Nanotechnology

Volumn 22, Issue 24, 2011, Pages

  Kim, Kwangeun ^a   Moon, Taeho ^a   Kim, Jeongyong ^b   Kim, Sangsig ^a  

^a Korea University   (South Korea)

^b SolarLight Ltd   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTROPHORESIS; DIRECT TRANSFER; ELECTROLUMINESCENCE SPECTRA; EXCITATION CURRENTS; LIGHT EMITTING DEVICES; P-N HETEROJUNCTIONS; SI WAFER; THERMAL CHEMICAL VAPOR DEPOSITION; ZNO NWS;

CHEMICAL VAPOR DEPOSITION; CURRENT DENSITY; ELECTROPHORESIS; HETEROJUNCTIONS; LIGHT; LIGHT EMISSION; NANOWIRES; SILICON; SILICON WAFERS; WET ETCHING; ZINC OXIDE;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955876283     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/24/245203     Document Type: Article

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