Composition dependent thermoelectric properties of sintered Mg2Si1-xGex (x = 0 to 1) initiated from a melt-grown polycrystalline source

Thin Solid Films

Volumn 515, Issue 22, 2007, Pages 8237-8241

  Akasaka, Masayasu ^a,b   Iida, Tsutomu ^a   Nishio, Keishi ^a   Takanashi, Yoshifumi ^a  

^a TOKYO UNIVERSITY OF SCIENCE   (Japan)

^b NONE

Author keywords

Mg2Si1 xGex; Semiconductors; Sintering; Thermoelectrics

Indexed keywords

HIGH TEMPERATURE EFFECTS; POLYCRYSTALLINE MATERIALS; SINTERING; THERMOELECTRICITY;

PLASMA SINTERING TECHNIQUE; THERMOELECTRICS;

MAGNESIUM COMPOUNDS;

EID: 34547794611     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.02.053     Document Type: Article

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