Integration of III-V materials on silicon substrates for multi-junction solar cell applications

Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

Volumn , Issue , 2011, Pages

  Garcia Tabares E ^a   Garcia, I ^a   Rey Stolle, I ^a   Algora, C ^a   Martin D ^b  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

^b Centro de Estudios Superiores Felipe II   (Spain)

Author keywords

III V on Si heteroepitaxy; Metal Organic Vapor Phase Epitaxy (MOVPE); metamorphic; multi junction solar cell

Indexed keywords

CHEAP SUBSTRATE; II-IV SEMICONDUCTORS; III/V ON SI HETEROEPITAXY; METAL-ORGANIC VAPOR PHASE EPITAXY (MOVPE); METAMORPHIC; MULTI JUNCTION SOLAR CELLS; PHOSPHORUS DIFFUSION; PHOTOVOLTAIC APPLICATIONS; SILICON SUBSTRATES; SILICON SURFACES; VIRTUAL SUBSTRATES;

ELECTRON DEVICES; EPITAXIAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; NANOSTRUCTURED MATERIALS; PHOSPHORUS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR JUNCTIONS; SOLAR CELLS; SUBSTRATES; VAPORS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 79955745279     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/SCED.2011.5744190     Document Type: Conference Paper

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