Structural and bonding properties of ScSi-n (n = 2 ∼ 6) clusters: Photoelectron spectroscopy and density functional calculations

Chinese Physics B

Volumn 20, Issue 4, 2011, Pages

  Xu, Hong Guang ^a   Wu, Miao Miao ^b   Zhang, Zeng Guang ^a   Sun, Qiang ^b   Zheng, Wei Jun ^a  

^a PEKING UNIVERSITY   (China)

^b PEKING UNIVERSITY   (China)

Author keywords

density functional theory; metal doped silicon clusters; photoelectron

Indexed keywords

BONDING PROPERTY; CHARGE EFFECT; CLUSTER ANIONS; CLUSTER GEOMETRIES; DENSITY-FUNCTIONAL CALCULATIONS; ELECTRON BINDING ENERGY; ELECTRON CONFIGURATION; ELECTRONIC AND STRUCTURAL PROPERTIES; METAL-DOPED SILICON CLUSTERS; SILICON CLUSTERS; SIZE DEPENDENT; STABLE ISOMERS;

BINDING ENERGY; ELECTRONS; ISOMERS; NEGATIVE IONS; PHOTOELECTRICITY; PHOTOELECTRON SPECTROSCOPY; PHOTONS; SCANDIUM; SCANDIUM COMPOUNDS;

DENSITY FUNCTIONAL THEORY;

EID: 79955697312     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/20/4/043102     Document Type: Article

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