Metallophosphazene precursor routes to the solid-state deposition of metallic and dielectric microstructures and nanostructures on Si and SiO 2

Langmuir

Volumn 26, Issue 12, 2010, Pages 10223-10233

  Díaz, Carlos ^a   Valenzuela, Maria Luisa ^b   Laguna, Antonio ^c   Lavayen, Vladimir ^d   Jiménez, Josefina ^c   Power, Lynn A ^e   O'Dwyer, Colm ^e  

^a UNIVERSITY OF CHILE   (Chile)

^b UNIVERSIDAD ANDRÉS BELLO   (Chile)

^c UNIVERSITY OF ZARAGOZA   (Spain)

^d DEPARTAMENTO DE FÍSICA   (Chile)

^e UNIVERSITY OF LIMERICK   (Ireland)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE SIZE; ETCHING TREATMENT; EXPERIMENTAL ERRORS; ISLAND FORMATION; METAL CENTERS; METALLIC MICROSTRUCTURES; MICRO-SCALES; NANOSCALE STRUCTURE; NOBLE METALS; PHOSPHAZENES; POLYMER PRECURSORS; PRECURSOR ROUTES; PREPARATION METHOD; ROUGHNESS EXPONENT; SELF-AFFINE FRACTALS; SILICA SURFACE; SILICON SUBSTRATES; SURFACE AREA; SURFACE FEATURE;

ATOMIC FORCE MICROSCOPY; DEPOSITION; FILM PREPARATION; GOLD COATINGS; GOLD DEPOSITS; MICROSTRUCTURE; MORPHOLOGY; NANOSTRUCTURES; OLIGOMERS; PALLADIUM; PLASMA ETCHING; POLYMERS; PRECIOUS METALS; PYROLYSIS; SILICA; SILICON OXIDES; SILVER; SUBSTRATES; SURFACE ROUGHNESS; THIN FILMS; TIN; VAPOR DEPOSITION;

AMORPHOUS SILICON;

EID: 79955659640     PISSN: 07437463     EISSN: 15205827     Source Type: Journal    
DOI: 10.1021/la100371w     Document Type: Article

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