First principles study of oxygen-deficient centers in pure and Ge-doped silica

Journal of Non-Crystalline Solids

Volumn 357, Issue 8-9, 2011, Pages 1994-1999

  Richard, N ^a   Girard, S ^a   Martin Samos, L ^b   Cuny, V ^c   Boukenter, A ^c   Ouerdane, Y ^c   Meunier, J P ^c  

^a DIF   (France)

^b DEMOCRITOS NATIONAL SIMULATION CENTER   (Italy)

^c UNIVERSITÉ JEAN MONNET   (France)

Author keywords

Ab initio calculations; Defects; Doping; Silica

Indexed keywords

AMORPHOUS SILICON; CALCULATIONS; CRYSTAL ATOMIC STRUCTURE; DEFECTS; DENSITY FUNCTIONAL THEORY; DOPING (ADDITIVES); ELECTRONIC STRUCTURE; OXYGEN VACANCIES; POINT DEFECTS; SILICA;

AB INITIO CALCULATIONS; FIRST-PRINCIPLES STUDY; FORMATION ENERGIES; LOCAL ENVIRONMENTS; NEUTRAL OXYGEN VACANCY; OXYGEN DEFICIENT CENTERS; STATISTICAL STUDY; STRUCTURAL PARAMETER;

SI-GE ALLOYS;

EID: 79955481162     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jnoncrysol.2010.12.069     Document Type: Conference Paper

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