Effect of thermal strain on Jc and Tc in high density nano-SiC doped MgB2

Journal of Applied Physics

Volumn 109, Issue 7, 2011, Pages

  Li, W X ^a   Zeng, R ^a   Lu, L ^a   Dou, S X ^a  

^a UNIVERSITY OF WOLLONGONG   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

CRITICAL TRANSITION TEMPERATURES; DIFFUSION PROCESS; FLUX PINNING FORCE; HIGH DENSITY; HIGH-T; LATTICE STRAIN; NANO-SIC; RAMAN CHARACTERISTICS; SUPERCONDUCTING CRITICAL CURRENT; SUPERCURRENTS; THERMAL EXPANSION COEFFICIENTS; THERMAL STRAIN;

FLUX PINNING; POINT DEFECTS; SILICON CARBIDE;

THERMAL EXPANSION;

EID: 79955450540     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3549590     Document Type: Conference Paper

References (20)

1. A. Gumbel, J. Eckert, G. Fuchs, K. Nenkov, K. H. Muller, and L. Schultz, Appl. Phys. Lett. 80, 2725 (2002). 10.1063/1.1469654 (Pubitemid 34573537)
2. R. Zeng, S. X. Dou, L. Lu, W. X. Li, J. H. Kim, P. Munroe, R. K. Zheng, and S. P. Ringer, Appl. Phys. Lett. 94, 042510 (2009). 10.1063/1.3078396
3. S. X. Dou, O. Shcherbakova, W. K. Yeoh, J. H. Kim, S. Soltanian, X. L. Wang, C. Senatore, R. Flukiger, M. Dhalle, O. Husnjak, and E. Babic, Phys. Rev. Lett. 98, 097002 (2007). 10.1103/PhysRevLett.98.097002 (Pubitemid 46353819)
4. W. X. Li, R. Zeng, L. Lu, Y. Li, and S. X. Dou, J. Appl. Phys. 106, 093906 (2009). 10.1063/1.3253757
5. W. X. Li, R. Zeng, L. Lu, Y. Zhang, S. X. Dou, Y. Li, R. H. Chen, and M. Y. Zhu, Physica C 469, 1519 (2009). 10.1016/j.physc.2009.05.230
6. A. V. Pogrebnyakov, J. M. Redwing, S. Raghavan, V. Vaithyanathan, D. G. Schlom, S. Y. Xu, Q. Li, D. A. Tenne, A. Soukiassian, X. X. Xi, M. D. Johannes, D. Kasinathan, W. E. Pickett, J. S. Wu, and J. C. H. Spence, Phys. Rev. Lett. 93, 147006 (2004). 10.1103/PhysRevLett.93.147006
7. A. Matsumoto, H. Kumakura, H. Kitaguchi, B. J. Senkowicz, M. C. Jewell, E. E. Hellstrom, Y. Zhu, P. M. Voyles, and D. C. Larbalestier, Appl. Phys. Lett. 89, 132508 (2006). 10.1063/1.2357027 (Pubitemid 44484119)
8. M. D. Sumption, M. Bhatia, M. Rindfleisch, M. Tomsic, S. Soltanian, S. X. Dou, and E. W. Collings, Appl. Phys. Lett. 86, 092507 (2005). 10.1063/1.1872210 (Pubitemid 40870905)
9. G. Blatter, M. V. Feigelman, V. B. Geshkenbein, A. I. Larkin, and V. M. Vinokur, Rev. Mod. Phys. 66, 1125 (1994). 10.1103/RevModPhys.66.1125
10. W. X. Li, Y. Li, R. H. Chen, R. Zeng, M. Y. Zhu, H. M. Jin, and S. X. Dou, J. Phys.: Condens. Matter 20, 255235 (2008). 10.1088/0953-8984/20/25/255235 (Pubitemid 351777628)
11. W. X. Li, Y. Li, R. H. Chen, R. Zeng, S. X. Dou, M. Y. Zhu, and H. M. Jin, Phys. Rev. B 77, 094517 (2008). 10.1103/PhysRevB.77.094517
12. W. X. Li, R. Zeng, C. K. Poh, Y. Li, and S. X. Dou, J. Phys.: Condens. Matter 22, 135701 (2010). 10.1088/0953-8984/22/13/135701
13. L. Shi, H. R. Zhang, L. Chen, and Y. Feng, J. Phys.: Condens. Matter 16, 6541 (2004). 10.1088/0953-8984/16/36/019
14. P. B. Allen, Phys. Rev. B 6, 2577 (1972). 10.1103/PhysRevB.6.2577
15. J. Kortus, O. V. Dolgov, R. K. Kremer, and A. A. Golubov, Phys. Rev. Lett. 94, 027002 (2005). 10.1103/PhysRevLett.94.027002 (Pubitemid 40629808)
16. W. L. McMillan, Phys. Rev. 167, 331 (1968). 10.1103/PhysRev.167.331
17. P. B. Allen and R. C. Dynes, Phys. Rev. B 12, 905 (1975). 10.1103/PhysRevB.12.905
18. J. Kortus, I. I. Mazin, K. D. Belashchenko, V. P. Antropov, and L. L. Boyer, Phys. Rev. Lett. 86, 4656 (2001). 10.1103/PhysRevLett.86.4656 (Pubitemid 32471406)
19. R. Osborn, E. A. Goremychkin, A. I. Kolesnikov, and D. G. Hinks, Phys. Rev. Lett. 87, 017005 (2001). 10.1103/PhysRevLett.87.017005
20. A. Brinkman, A. A. Golubov, H. Rogalla, O. V. Dolgov, J. Kortus, Y. Kong, O. Jepsen, and O. K. Andersen, Phys. Rev. B 65, 180517 (2002). 10.1103/PhysRevB.65.180517